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Avinash Kumar
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β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
2542022
Gallium Oxide: Materials Properties, Crystal Growth, and Devices
M Higashiwaki, S Fujita
Springer Nature, 2020
1442020
Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors
M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
652018
Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1− x) 2O3/Ga2O3 heterostructures
A Kumar, K Ghosh, U Singisetti
Journal of Applied Physics 128 (10), 2020
302020
First principles study of thermoelectric properties of β-gallium oxide
A Kumar, U Singisetti
Applied Physics Letters 117 (26), 2020
172020
Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications
I Lee, A Kumar, K Zeng, U Singisetti, X Yao
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 4377-4382, 2017
162017
Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures
I Lee, A Kumar, K Zeng, U Singisetti, X Yao
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
152017
Plasmon–Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V–1 s–1
AK Rajapitamahuni, AK Manjeshwar, A Kumar, A Datta, P Ranga, ...
ACS nano 16 (6), 8812-8819, 2022
142022
High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors
MD Randle, A Lipatov, A Datta, A Kumar, I Mansaray, A Sinitskii, ...
Applied Physics Letters 120 (7), 2022
102022
Building the quasi one dimensional transistor from 2D materials
PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ...
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019
52019
Correlated negative magnetization, exchange bias, and electrical properties in
Deepak, A Kumar, AK Bera, SM Yusuf
Physical Review Materials 6 (7), 074405, 2022
32022
Electrical Properties 2
K Ghosh, A Kumar, U Singisetti
Gallium Oxide: Materials Properties, Crystal Growth, and Devices 293, 407, 2020
32020
Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’”
M Randle, A Lipatov, A Kumar, PA Dowben, A Sinitskii, U Singisetti, ...
ACS nano 13 (8), 8498-8500, 2019
32019
Electron Transport in β-Ga2O3 from First-Principles
A Kumar, K Ghosh, U Singisetti
Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications, 7-1-7-12, 2023
2023
7 ELECTRON TRANSPORT IN β-Ga2 O3 FROM FIRST-PRINCIPLES
JS Speck, E Farzana
Ultrawide Bandgap β-Ga2 O3 Semiconductor, 2023
2023
Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1− x) 2O3/Ga2O3 heterostructures
A Kumar, U Singisetti
Journal of Applied Physics 132 (20), 2022
2022
Low and High Field Electron Transport Study in β-(AlxGa1-x) 2O3/Ga2O3 Heterostructures Using Ab-initio Calculated Parameters
A Kumar
State University of New York at Buffalo, 2022
2022
Gallium oxide based power and RF device technologies
U Singisetti, S Sharma, K Zeng, A Vaidya, S Saha, A Kumar, A Sharma
Radar Sensor Technology XXV 11742, 117420V, 2021
2021
Low field transport calculation of 2-dimensional electron gas in beta-(AlxGa1-x)(2) O-3/Ga2O3 heterostructures (vol 128, 105703, 2020)
A Kumar, K Ghosh, U Singisetti
JOURNAL OF APPLIED PHYSICS 129 (10), 2021
2021
(Invited) Electron Transport in Bulk and 2DEGs in beta-Ga2O3 and kV Class Laterals Device in beta-Ga2O3
K Ghosh, K Zhang, A Vaidya, A Sharma, A Kumar, U Singisetti
Electrochemical Society Meeting Abstracts 237, 1336-1336, 2020
2020
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