High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi IEEE Transactions on Electron Devices 60 (3), 927-934, 2013 | 229 | 2013 |
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi IEEE Transactions on Electron Devices 60 (3), 927-934, 2013 | 229 | 2013 |
1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation R Zhang, N Taoka, PC Huang, M Takenaka, S Takagi 2011 International Electron Devices Meeting, 28.3. 1-28.3. 4, 2011 | 96 | 2011 |
High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation R Zhang, PC Huang, N Taoka, M Takenaka, S Takagi 2012 Symposium on VLSI Technology (VLSIT), 161-162, 2012 | 72 | 2012 |
Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures R Zhang, PC Huang, JC Lin, M Takenaka, S Takagi Applied Physics Letters 102 (8), 2013 | 39 | 2013 |
Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise BC Wang, YY Lu, SJ Chang, JF Chen, SC Tsai, CH Hsu, CW Yang, ... IEEE electron device letters 34 (2), 151-153, 2012 | 31 | 2012 |
Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces R Zhang, PC Huang, JC Lin, M Takenaka, S Takagi 2012 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2012 | 26 | 2012 |
Low-Frequency Noise Characteristics for Various-Added-Based 28-nm High-/Metal-Gate nMOSFETs SC Tsai, BC Wang, SJ Chang, CH Hsu, CW Yang, CM Lai, CW Hsu, ... IEEE electron device letters 34 (7), 834-836, 2013 | 15 | 2013 |
Investigation of electrical characteristics of vertical junction Si n-type tunnel FET PC Huang, T Tanamoto, M Goto, M Takenaka, S Takagi IEEE Transactions on Electron Devices 65 (12), 5511-5517, 2018 | 12 | 2018 |
Characterization of oxide traps in 28 nm n-type metal–oxide–semiconductor field-effect transistors with different uniaxial tensile stresses utilizing random telegraph noise BC Wang, SL Wu, YY Lu, CW Huang, CY Wu, YM Lin, KH Lee, O Cheng, ... Japanese Journal of Applied Physics 52 (4S), 04CC24, 2013 | 9 | 2013 |
Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation R Zhang, PC Huang, N Taoka, M Yokoyama, M Takenaka, S Takagi Applied Physics Letters 108 (5), 2016 | 6 | 2016 |
Investigation of impact ionization in strained-Si n-channel metal–oxide–semiconductor field-effect transistors TK Kang, PC Huang, YH Sa, SL Wu, SJ Chang Japanese journal of applied physics 47 (4S), 2664, 2008 | 6 | 2008 |
Characteristics ofInterface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method PC Huang, SJ Chang, YT Huang, JF Chen, CT Lin, M Ma, O Cheng IEEE transactions on electron devices 58 (6), 1635-1642, 2011 | 5 | 2011 |
Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis TH Kao, SJ Chang, YK Fang, PC Huang, CM Lai, CW Hsu, YW Chen, ... Applied Physics Letters 105 (6), 2014 | 4 | 2014 |
Effect of annealing process on trap properties in high-k/metal gate n-channel metal–oxide–semiconductor field-effect transistors through low-frequency noise and random … HF Chiu, YS Chang, SJ Chang, PC Huang, JF Chen, SC Tsai, CM Lai, ... Japanese Journal of Applied Physics 52 (4S), 04CC22, 2013 | 4 | 2013 |
Impact of Uniaxial Strain on Random Telegraph Noise in High-/Metal Gate pMOSFETs PC Huang, JF Chen, SC Tsai, KS Tsai, TH Kao, YK Fang, CM Lai, ... IEEE Transactions on Electron Devices 62 (3), 988-993, 2015 | 3 | 2015 |
Impact of Aluminum Ion Implantation on the Low Frequency Noise Characteristics of Hf-Based High- /Metal Gate pMOSFETs TH Kao, SL Wu, CY Wu, YK Fang, BC Wang, PC Huang, CM Lai, CW Hsu, ... IEEE Electron Device Letters 35 (9), 954-956, 2014 | 3 | 2014 |
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation TH Kao, SJ Chang, YK Fang, PC Huang, BC Wang, CY Wu, SL Wu Solid-State Electronics 115, 7-11, 2016 | 2 | 2016 |
Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs PC Huang, CY Chang, O Cheng, SJ Chang Japanese Journal of Applied Physics 54 (10), 100301, 2015 | 2 | 2015 |
Investigation of trap properties of Hf0. 83Zr0. 17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses SC Tsai, SL Wu, PC Huang, BC Wang, KS Tsai, TH Kao, CW Yang, ... Japanese Journal of Applied Physics 53 (8S1), 08LB03, 2014 | 2 | 2014 |