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Daniel Tomaszewski
Daniel Tomaszewski
Łukasiewicz Research Network - Institute of Microelectronics and Photonics
Verified email at imif.lukasiewicz.gov.pl
Title
Cited by
Cited by
Year
Electrical characterization of ISFETs
D Tomaszewski, CM Yang, B Jaroszewicz, M Zaborowski, P Grabiec, ...
Journal of telecommunications and information technology, 55-60, 2007
1282007
Optimized diode analysis of electrical silicon substrate properties
A Czerwinski, E Simoen, C Claeys, K Klima, D Tomaszewski, J Gibki, ...
Journal of the Electrochemical Society 145 (6), 2107, 1998
571998
Silicon ultra fast cameras for electron and γ sources in medical applications
M Cacciaa, A Airoldi, M Alemi, M Amati, L Badano, V Bartsch, D Berst, ...
Nuclear Physics B-Proceedings Supplements 125, 133-138, 2003
462003
Monolithic silicon pixel detectors in SOI technology
J Marczewski, M Caccia, K Domanski, P Grabiec, M Grodner, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
442005
SOI active pixel detectors of ionizing radiation-technology and design development
J Marczewski, K Domanski, P Grabiec, M Grodner, B Jaroszewicz, ...
IEEE Transactions on Nuclear Science 51 (3), 1025-1028, 2004
372004
Silicon junctionless field effect transistors as room temperature terahertz detectors
J Marczewski, W Knap, D Tomaszewski, M Zaborowski, P Zagrajek
Journal of Applied Physics 118 (10), 2015
362015
Hybrid active pixel sensors and SOI inspired option
M Amati, M Baranski, A Bulgheroni, M Caccia, K Domanski, P Grabiec, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003
312003
Technology development for SOI monolithic pixel detectors
J Marczewski, K Domanski, P Grabiec, M Grodner, B Jaroszewicz, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
272006
Investigation of the S-PIN diodes for silicon monolithic antennas with reconfigurable aperture
Y Yashchyshyn, J Marczewski, D Tomaszewski
IEEE Transactions on Microwave Theory and Techniques 58 (5), 1100-1106, 2010
252010
Monolithic active pixel detector realized in silicon on insulator technology
A Bulgheroni, M Caccia, K Domanski, P Grabiec, M Grodner, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004
252004
Full-size monolithic active pixel sensors in SOI technology—Design considerations, simulations and measurements results
H Niemiec, M Jastrzab, W Kucewicz, K Kucharski, J Marczewski, M Sapor, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
202006
The SUCIMA project: A status report on high granularity dosimetry and proton beam monitoring
M Caccia, L Badano, D Berst, C Bianchi, J Bol, C Cappellini, G Claus, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
152006
THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy
J Marczewski, D Coquillat, W Knap, C Kolacinski, P Kopyt, K Kucharski, ...
Opto-Electronics Review 26 (4), 261-269, 2018
142018
Double-fin FETs based on standard CMOS approach
M Zaborowski, D Tomaszewski, A Panas, P Grabiec
Microelectronic engineering 87 (5-8), 1396-1399, 2010
122010
Development of a monolithic active pixel sensor using SOI technology with a thick device layer
J Marczewski, P Grabiec, K Kucharski, D Tomaszewski, W Kucewicz, ...
IEEE Transactions on Nuclear Science 57 (1), 381-386, 2010
122010
Monolithic active pixel sensor realized in SOI technology—concept and verification
H Niemiec, A Bulgheroni, M Caccia, P Grabiec, M Grodner, M Jastrzab, ...
Microelectronics Reliability 45 (7-8), 1202-1207, 2005
122005
Customer-oriented product engineering of micro and nano devices
T Bieniek, G Janczyk, P Grabiec, J Szynka, S Kaliciński, P Janus, ...
Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010
112010
Process control monitor based extraction procedure for statistical compact MOSFET modeling
M Yakupov, D Tomaszewski, W Grabinski
Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010
112010
Global extraction of MOSFET parameters using the EKV model: Some properties of the underlying optimization task
J Arabas, L Bartnik, S Szostak, D Tomaszewski
2009 MIXDES-16th International Conference Mixed Design of Integrated …, 2009
112009
Development of si nanowire chemical sensors
M Zaborowski, P Dumania, D Tomaszewski, J Czupryniak, T Ossowski, ...
Procedia Engineering 47, 1053-1056, 2012
102012
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