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Yuan Liu
Yuan Liu
Guangdong University of Technology
Verified email at ieee.org
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Cited by
Cited by
Year
Effect of hydrogen on defects of AlGaN/GaN HEMTs characterized by low-frequency noise
YQ Chen, YC Zhang, Y Liu, XY Liao, YF En, WX Fang, Y Huang
IEEE Transactions on Electron Devices 65 (4), 1321-1326, 2018
442018
Total dose ionizing radiation effects in the indium–zinc oxide thin-film transistors
Y Liu, WJ Wu, YF En, L Wang, ZF Lei, XH Wang
IEEE electron device letters 35 (3), 369-371, 2014
402014
Movable noncontact RF current measurement on a PCB trace
H Qiu, W Fang, Y En, Y Huang, Y Liu, P Lai, Y Chen, C Shi
IEEE Transactions on Instrumentation and Measurement 66 (9), 2464-2473, 2017
372017
Analysis and simulation of low-frequency noise in indium-zinc-oxide thin-film transistors
Y Liu, H He, R Chen, YF En, B Li, YQ Chen
IEEE Journal of the Electron Devices Society 6, 271-279, 2018
362018
An analytical model based on surface potential for a-Si: H thin-film transistors
Y Liu, R Yao, B Li, WL Deng
Journal of Display Technology 4 (2), 180-187, 2008
312008
Design of a compact wideband CP metasurface antenna
L Yuan, H Yu‐Xuan, L Zhan‐Wei, C Shu‐Ting, X Xiao‐Ming, G Jing
International Journal of RF and Microwave Computer‐Aided Engineering 30 (10 …, 2020
272020
Effect of self-assembled monolayers (SAMs) as surface passivation on the flexible a-InSnZnO thin-film transistors
W Zhong, R Yao, Y Liu, L Lan, R Chen
IEEE Transactions on Electron Devices 67 (8), 3157-3162, 2020
242020
A new broadband circularly polarized antenna with a single‐layer metasurface
Y Liu, YX Huang, ZW Liu, ST Cai, XM Xiong, J Guo
International Journal of RF and Microwave Computer‐Aided Engineering 30 (7 …, 2020
242020
Subthreshold characteristics of polysilicon TFTs
W Deng, X Zheng, R Chen, Y Liu
Solid-state electronics 52 (5), 695-703, 2008
232008
A mobile robot visual SLAM system with enhanced semantics segmentation
F Li, W Chen, W Xu, L Huang, D Li, S Cai, M Yang, X Xiong, Y Liu, W Li
Ieee Access 8, 25442-25458, 2020
222020
Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors
Y Liu, WJ Wu, B Li, YF En, L Wang, YR Liu
212014
Low-frequency noise in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors
Y Liu, S Deng, R Chen, B Li, YF En, Y Chen
IEEE Electron Device Letters 39 (2), 200-203, 2017
182017
Scaling down effect on low frequency noise in polycrystalline silicon thin-film transistors
Y Liu, ST Cai, CY Han, YY Chen, L Wang, XM Xiong, R Chen
IEEE Journal of the Electron Devices Society 7, 203-209, 2019
172019
Temperature-Dependent low-frequency noise in indium–zinc–oxide thin-film transistors down to 10 K
Y Liu, H He, YY Chen, R Chen, L Wang, S Cai, X Xiong
IEEE Transactions on Electron Devices 66 (5), 2192-2197, 2019
162019
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Y Liu, HB Chen, YR Liu, X Wang, YF En, B Li, YD Lu
Chinese Physics B 24 (8), 088503, 2015
162015
Analysis of indium–zinc–oxide thin-film transistors under electrostatic discharge stress
Y Liu, R Chen, B Li, YF En, YQ Chen
IEEE Transactions on Electron Devices 65 (1), 356-360, 2017
152017
A novel wideband circularly polarized modified square‐slot antenna with loaded strips
Y Liu, ST Cai, XM Xiong, WJ Li, J Yang
International Journal of RF and Microwave Computer‐Aided Engineering 29 (10 …, 2019
142019
Analytical drain current model for organic thin-film transistors at different temperatures considering both deep and tail trap states
H He, Y Liu, B Yan, X Lin, X Zheng, S Zhang
IEEE Transactions on Electron Devices 63 (11), 4423-4431, 2016
142016
Using termination effect to characterize electric and magnetic field coupling between TEM cell and microstrip line
C Shi, W Fang, C Chai, Y Huang, Y En, Y Yang, Y Liu, Y Chen, X Liao
IEEE Transactions on Electromagnetic Compatibility 57 (6), 1338-1344, 2015
142015
Novel and secure plaintext‐related image encryption algorithm based on compressive sensing and tent‐sine system
S Huang, L Huang, S Cai, X Xiong, Y Liu
IET Image Processing 16 (6), 1544-1557, 2022
122022
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