| Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011 | 202 | 2011 |
| Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010 | 192 | 2010 |
| Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ... Applied Physics Letters 102 (7), 2013 | 101 | 2013 |
| Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors TH Hung, M Esposto, S Rajan Applied Physics Letters 99 (16), 2011 | 78 | 2011 |
| Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements A Chini, M Esposto, G Meneghesso, E Zanoni Electronics letters 45 (8), 426-427, 2009 | 57 | 2009 |
| Evaluation and numerical simulations of GaN HEMTs electrical degradation A Chini, V Di Lecce, M Esposto, G Meneghesso, E Zanoni IEEE Electron Device Letters 30 (10), 1021-1023, 2009 | 56 | 2009 |
| Analytical model for power switching GaN-based HEMT design M Esposto, A Chini, S Rajan IEEE Transactions on Electron Devices 58 (5), 1456-1461, 2011 | 45 | 2011 |
| Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs A Chini, F Fantini, V Di Lecce, M Esposto, A Stocco, N Ronchi, F Zanon, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 41 | 2009 |
| RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements A Chini, V Di Lecce, M Esposto, G Meneghesso, E Zanoni 2009 European Microwave Integrated Circuits Conference (EuMIC), 132-135, 2009 | 28 | 2009 |
| Challenges in the automotive application of GaN power switching devices M Su, C Chen, L Chen, M Esposto, S Rajan International Conference on Compound Semiconductor Manufacturing Technology …, 2012 | 17 | 2012 |
| The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs M Esposto, VD Lecce, M Bonaiuti, A Chini Journal of electronic materials 42, 15-20, 2013 | 14 | 2013 |
| Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes V Di Lecce, S Krishnamoorthy, M Esposto, TH Hung, A Chini, S Rajan Electronics letters 48 (6), 347-348, 2012 | 14 | 2012 |
| Polarization engineered 1-dimensional electron gas arrays DN Nath, PS Park, M Esposto, D Brown, S Keller, UK Mishra, S Rajan Journal of Applied Physics 111 (4), 2012 | 11 | 2012 |
| Characterization of a dielectric/GaN system using atom probe tomography B Mazumder, M Esposto, TH Hung, T Mates, S Rajan, JS Speck Applied Physics Letters 103 (15), 2013 | 10 | 2013 |
| Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress V Di Lecce, M Esposto, M Bonaiuti, G Meneghesso, E Zanoni, F Fantini, ... Microelectronics Reliability 50 (9-11), 1523-1527, 2010 | 5 | 2010 |
| Study of GaN HEMTs electrical degradation by means of numerical simulations V Di Lecce, M Esposto, M Bonaiuti, F Fantini, A Chini 2010 Proceedings of the European Solid State Device Research Conference, 285-288, 2010 | 3 | 2010 |
| Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics M Esposto, V Di Lecce, A Chini, S De Guido, A Passaseo, M De Vittorio 2009 Proceedings of the European Solid State Device Research Conference, 431-434, 2009 | 3 | 2009 |
| Characterization and numerical simulations of high power field-plated pHEMTs A Chini, M Esposto, G Verzellesi, S Lavanga, C Lanzieri, A Cetronio 2008 European Microwave Integrated Circuit Conference, 218-221, 2008 | 2 | 2008 |
| Reverse gate bias stress induced degradation of GaN HEMT E Zanoni, M Meneghini, A Tazzoli, N Ronchi, A Stocco, V DI LECCE, ... | 1 | 2009 |
| Electrostatic tuning between 1-dimensional and 2-dimensional electron gases D Nath, PS Park, M Esposto, D Brown, S Keller, U Mishra, S Rajan APS March Meeting Abstracts 2012, P18. 001, 2012 | | 2012 |
