| Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO Z Zhang, KE Knutsen, T Merz, AY Kuznetsov, BG Svensson, LJ Brillson Applied Physics Letters 100 (4), 2012 | 45 | 2012 |
| Process dependence of H passivation and doping in H-implanted ZnO Z Zhang, DC Look, R Schifano, KM Johansen, BG Svensson, LJ Brillson Journal of Physics D: Applied Physics 46 (5), 055107, 2013 | 29 | 2013 |
| Neutron irradiation effects on gallium nitride-based Schottky diodes CH Lin, EJ Katz, J Qiu, Z Zhang, UK Mishra, L Cao, LJ Brillson Applied Physics Letters 103 (16), 2013 | 23 | 2013 |
| Control of Li configuration and electrical properties of Li-doped ZnO Z Zhang, KE Knutsen, T Merz, AY Kuznetsov, BG Svensson, LJ Brillson Journal of Physics D: Applied Physics 45 (37), 375301, 2012 | 16 | 2012 |
| Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO Z Zhang, V Quemener, CH Lin, BG Svensson, LJ Brillson Applied Physics Letters 103 (7), 2013 | 15 | 2013 |
| Interplay of dopants and native point defects in ZnO LJ Brillson, Z Zhang, DR Doutt, DC Look, BG Svensson, AY Kuznetsov, ... physica status solidi (b) 250 (10), 2110-2113, 2013 | 13 | 2013 |
| Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics EJ Katz, Z Zhang, HL Hughes, KB Chung, G Lucovsky, LJ Brillson Journal of Vacuum Science & Technology B 29 (1), 2011 | 6 | 2011 |
| Identification of Acceptor States in Li Doped ZnO Using Nanoscale Depth-Resolved Cathodoluminescence Spectroscopy Z Zhang, KE Knutsen, A Kuznetsov, B Svensson, L Brillson Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
| Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics EJ Katz, Z Zhang, HL Hughes, KB Chung, G Lucovsky, LJ Brillson 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | | 2009 |
| P-4-13L Z Zhang, EJ Katz, D Zeller, G Lucovsky, LF Brillson | | |
