| Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition KJ Park, JM Doub, T Gougousi, GN Parsons Applied Physics Letters 86 (5), 2005 | 194 | 2005 |
| Photodissociation study of in the first continuum T Gougousi, PC Samartzis, TN Kitsopoulos The Journal of chemical physics 108 (14), 5742-5746, 1998 | 133 | 1998 |
| Tip-enhanced strong coupling spectroscopy, imaging, and control of a single quantum emitter KD Park, MA May, H Leng, J Wang, JA Kropp, T Gougousi, M Pelton, ... Science advances 5 (7), eaav5931, 2019 | 125 | 2019 |
| Deposition of yttrium oxide thin films in supercritical carbon dioxide T Gougousi, Z Chen Thin Solid Films 516 (18), 6197-6204, 2008 | 115 | 2008 |
| Atmospheric pressure plasma enhanced chemical vapor deposition of hydrophobic coatings using fluorine-based liquid precursors JH Yim, V Rodriguez-Santiago, AA Williams, T Gougousi, DD Pappas, ... Surface and Coatings Technology 234, 21-32, 2013 | 114 | 2013 |
| Properties of atomic layer deposited HfO2 thin films JC Hackley, T Gougousi Thin Solid Films 517 (24), 6576-6583, 2009 | 110 | 2009 |
| Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon T Gougousi, MJ Kelly, DB Terry, GN Parsons Journal of applied physics 93 (3), 1691-1696, 2003 | 101 | 2003 |
| Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions T Gougousi, D Barua, ED Young, GN Parsons Chemistry of materials 17 (20), 5093-5100, 2005 | 88 | 2005 |
| Recombination of H3+ and D3+ ions in a flowing afterglow plasma T Gougousi, R Johnsen, MF Golde International Journal of Mass Spectrometry and Ion Processes 149, 131-151, 1995 | 79 | 1995 |
| Electron-ion recombination rate coefficient measurements in a flowing afterglow plasma T Gougousi, MF Golde, R Johnsen Chemical physics letters 265 (3-5), 399-403, 1997 | 72 | 1997 |
| Carbonate formation during post-deposition ambient exposure of high- dielectrics T Gougousi, D Niu, RW Ashcraft, GN Parsons Applied Physics Letters 83 (17), 3543-3545, 2003 | 71 | 2003 |
| Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si JC Hackley, T Gougousi, JD Demaree Journal of Applied Physics 102 (3), 2007 | 68 | 2007 |
| High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ... IEEE electron device letters 34 (2), 199-201, 2013 | 65 | 2013 |
| Photofragmentation study of Cl2 using ion imaging PC Samartzis, I Sakellariou, T Gougousi, TN Kitsopoulos The Journal of chemical physics 107 (1), 43-48, 1997 | 62 | 1997 |
| Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces JC Hackley, JD Demaree, T Gougousi Applied Physics Letters 92 (16), 2008 | 61 | 2008 |
| Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ... Applied Physics Letters 98 (2), 2011 | 60 | 2011 |
| Measurement of the absolute yield of products in the dissociative recombination of ions with electrons MP Skrzypkowski, T Gougousi, R Johnsen, MF Golde The Journal of chemical physics 108 (20), 8400-8407, 1998 | 57 | 1998 |
| Langmuir-probe measurements in flowing-afterglow plasmas R Johnsen, EV Shun’ko, T Gougousi, MF Golde Physical Review E 50 (5), 3994, 1994 | 53 | 1994 |
| Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces T Gougousi, JW Lacis Thin Solid Films 518 (8), 2006-2009, 2010 | 52 | 2010 |
| The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions T Gougousi, MJ Kelly, GN Parsons Applied Physics Letters 80 (23), 4419-4421, 2002 | 46 | 2002 |
Jaron A. KroppGeneral Technical Services, LLCVerified email at umbc.edu
