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J. M. Iglesias
J. M. Iglesias
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Title
Cited by
Cited by
Year
Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene
JM Iglesias, MJ Martín, E Pascual, R Rengel
Applied Physics Letters 108 (4), 2016
312016
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor
PC Feijoo, F Pasadas, JM Iglesias, MJ Martin, R Rengel, C Li, W Kim, ...
Nanotechnology 28 (48), 485203, 2017
262017
Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors
PC Feijoo, F Pasadas, JM Iglesias, R Rengel, D Jiménez
IEEE Transactions on Electron Devices 66 (3), 1567-1573, 2019
182019
Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene
JM Iglesias, MJ Martín, E Pascual, R Rengel
Journal of Physics: Conference Series 647 (1), 012003, 2015
172015
Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport
R Rengel, JM Iglesias, MJ Martín
Semiconductor Science and Technology 33 (6), 065011, 2018
142018
Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene
JM Iglesias, MJ Martín, E Pascual, R Rengel
Applied Surface Science 424, 52-57, 2017
112017
Effect of charged impurity scattering on the electron diffusivity and mobility in graphene
R Rengel, JM Iglesias, E Pascual, MJ Martin
Journal of Physics: Conference Series 647 (1), 012046, 2015
82015
Electronic transport and noise characterization in MoS2
E Pascual, JM Iglesias, MJ Martín, R Rengel
Semiconductor Science and Technology 35 (5), 055021, 2020
72020
Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene
JM Iglesias, R Rengel, E Pascual, MJ Martín
Journal of Physics D: Applied Physics 50 (30), 305101, 2017
62017
A balance equations approach for the study of the dynamic response and electronic noise in graphene
R Rengel, JM Iglesias, E Pascual, MJ Martín
Journal of Applied Physics 121 (18), 2017
52017
Noise temperature in graphene at high frequencies
R Rengel, JM Iglesias, E Pascual, MJ Martín
Semiconductor Science and Technology 31 (7), 075001, 2016
52016
Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides
R Rengel, Ó Castelló, E Pascual, MJ Martín, JM Iglesias
Journal of Physics D: Applied Physics 53 (39), 395102, 2020
42020
Interband scattering-induced ambipolar transport in graphene
JM Iglesias, E Pascual, MJ Martín, R Rengel
Semiconductor Science and Technology 34 (6), 065011, 2019
42019
Monte Carlo investigation of noise and high-order harmonic extraction in graphene
JM Iglesias, E Pascual, R Rengel
Semiconductor Science and Technology 33 (12), 124012, 2018
42018
High-order harmonic generation in 2D transition metal disulphides
JM Iglesias, E Pascual, MJ Martin, R Rengel
Applied Physics Letters 119 (1), 2021
32021
Impact of the hot phonon effect on electronic transport in monolayer silicene
JM Iglesias, E Pascual, MJ Martín, R Rengel
Journal of Physics D: Applied Physics 51 (41), 415102, 2018
32018
Impact of the hot phonon effect on electronic transport in monolayer silicene
JM Iglesias, E Pascual, MJ Martín, R Rengel
Journal of Physics D: Applied Physics 51 (41), 415102, 2018
32018
Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening
JM Iglesias, A Nardone, R Rengel, K Kalna, MJ Martín, E Pascual
2D Materials 10 (2), 025011, 2023
22023
Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence
E Pascual, JM Iglesias, MJ Martín, R Rengel
Materials 14 (17), 5108, 2021
22021
Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene
JM Iglesias, E Pascual, MJ Martín, R Rengel
Physica E: Low-dimensional Systems and Nanostructures 123, 114211, 2020
22020
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Articles 1–20