Ferroelectric FET analog synapse for acceleration of deep neural network training M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta 2017 IEEE international electron devices meeting (IEDM), 6.2. 1-6.2. 4, 2017 | 517 | 2017 |
Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018 | 318 | 2018 |
A ferroelectric field effect transistor based synaptic weight cell M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ... Journal of Physics D: Applied Physics 51 (43), 434001, 2018 | 135 | 2018 |
Time-resolved measurement of negative capacitance P Sharma, J Zhang, K Ni, S Datta IEEE Electron Device Letters 39 (2), 272-275, 2017 | 90 | 2017 |
Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack P Sharma, K Tapily, AK Saha, J Zhang, A Shaughnessy, A Aziz, ... 2017 Symposium on VLSI Technology, T154-T155, 2017 | 87 | 2017 |
Improved thermal stability of ferroelectric phase in epitaxially grown P (VDF-TrFE) thin films Z Fu, W Xia, W Chen, J Weng, J Zhang, J Zhang, Y Jiang, G Zhu Macromolecules 49 (10), 3818-3825, 2016 | 39 | 2016 |
Solvent vapor annealing of ferroelectric P (VDF-TrFE) thin films J Hu, J Zhang, Z Fu, Y Jiang, S Ding, G Zhu ACS Applied Materials & Interfaces 6 (20), 18312-18318, 2014 | 19 | 2014 |
Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating J Hu, J Zhang, Z Fu, J Weng, W Chen, S Ding, Y Jiang, G Zhu ACS applied materials & interfaces 7 (11), 6325-6330, 2015 | 16 | 2015 |
Negative capacitance transients in metal-ferroelectric Hf0.5Zr0.5O2-Insulator-Semiconductor (MFIS) capacitors P Sharma, J Zhang, AK Saha, S Gupta, S Datta 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 7 | 2017 |
Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors ZY Fu, JC Zhang, JH Hu, YL Jiang, SJ Ding, GD Zhu Chinese Physics B 24 (5), 058502, 2015 | 7 | 2015 |
Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations Z Fu, J Zhang, J Weng, W Chen, Y Jiang, G Zhu AIP Advances 5 (9), 2015 | 5 | 2015 |
Influence of poly (methyl metacrylate) addition on resistive switching performance of P3HT/P (VDF-TrFE) blend films J Weng, J Hu, J Zhang, Y Jiang, G Zhu Chinese Journal of Chemical Physics 30 (2), 200-206, 2017 | 3 | 2017 |
Optimization of Ni (Pt)/Si-cap/SiGe silicidation for pMOS source/drain contact LL Wang, JC Zhang, YL Jiang IEEE Transactions on Electron Devices 64 (5), 2067-2071, 2017 | 3 | 2017 |
Direct Observation of Dipole Influence Induced by a Spin Coated Organic Interfacial Layer on Effective Schottky Barrier Height Modulation of Hg/Si Contact JC Zhang, YL Jiang, GD Zhu, GP Ru, BZ Li IEEE Electron Device Letters 35 (2), 262-264, 2013 | 3 | 2013 |
Investigation of Ni (Pt)/Si-cap/SiGe solid phase reaction JC Zhang, YL Jiang, BZ Li 2014 International Workshop on Junction Technology (IWJT), 1-4, 2014 | 2 | 2014 |
Thermal stability improvement induced by laser annealing for 50-Å Ni (Pt) film silicidation JC Zhang, YL Jiang, BZ Li IEEE Transactions on Electron Devices 63 (2), 751-754, 2015 | 1 | 2015 |
Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector J Zhang, C Alessandri, P Fay, A Seabaugh, T Ytterdal, E Memisevic, ... 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017 | | 2017 |