Vertically aligned nanocomposite (BaTiO 3) 0.8:(La 0.7 Sr 0.3 MnO 3) 0.2 thin films with anisotropic multifunctionalities X Gao, D Zhang, X Wang, J Jian, Z He, H Dou, H Wang Nanoscale Advances 2 (8), 3276-3283, 2020 | 18 | 2020 |
First demonstration of BEOL-compatible ultrathin atomiclayer-deposited InZnO transistors with GHz operation and record high bias-stress stability D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022 | 15 | 2022 |
A gate-all-around InO Nanoribbon FET with near 20 mA/m drain current Z Zhang, Z Lin, PY Liao, V Askarpour, H Dou, Z Shang, A Charnas, M Si, ... IEEE Electron Device Letters 43 (11), 1905-1908, 2022 | 15 | 2022 |
Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response H Dou, X Gao, D Zhang, S Dhole, Z Qi, B Yang, MN Hasan, JH Seo, Q Jia, ... ACS Applied Electronic Materials 3 (12), 5278-5286, 2021 | 11 | 2021 |
High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3 C Yun, M Webb, W Li, R Wu, M Xiao, M Hellenbrand, A Kursumovic, ... Journal of Materials Chemistry C 9 (13), 4522-4531, 2021 | 11 | 2021 |
Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity M Hellenbrand, B Bakhit, H Dou, M Xiao, MO Hill, Z Sun, A Mehonic, ... Science Advances 9 (25), eadg1946, 2023 | 8 | 2023 |
First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10 11, SS of … J Zhang, Z Zhang, Z Lin, K Xu, H Dou, B Yang, X Zhang, H Wang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
Novel self-assembled two-dimensional layered oxide structure incorporated with Au nanoinclusions towards multifunctionalities D Zhang, X Gao, J Lu, P Lu, J Deitz, J Shen, H Dou, Z He, Z Shang, ... Nano Research 16 (1), 1465-1472, 2023 | 6 | 2023 |
Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, ... 2022 International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2022 | 6 | 2022 |
Single-Step Fabrication of Au-Fe-BaTiO3 Nanocomposite Thin Films Embedded with Non-Equilibrium Au-Fe Alloyed Nanostructures BX Rutherford, H Dou, B Zhang, Z He, JP Barnard, RL Paldi, H Wang Nanomaterials 12 (19), 3460, 2022 | 6 | 2022 |
Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility Z Zhang, Z Lin, M Si, D Zhang, H Dou, Z Chen, A Charnas, H Wang, ... Applied Physics Letters 120 (20), 2022 | 6 | 2022 |
Double-exchange bias modulation under horizontal and perpendicular field directions by 3D nanocomposite design J Huang, D Zhang, J Liu, H Dou, H Wang ACS Applied Materials & Interfaces 13 (42), 50141-50148, 2021 | 6 | 2021 |
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition J Zhang, Z Lin, Z Zhang, K Xu, H Dou, B Yang, A Charnas, D Zheng, ... IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties H Dou, M Hellenbrand, M Xiao, Z Hu, S Kunwar, A Chen, ... Advanced Electronic Materials 9 (5), 2201186, 2023 | 4 | 2023 |
Tunable Magnetic and Optical Anisotropy in ZrO2‐Co Vertically Aligned Nanocomposites Y Zhang, J Song, P Lu, J Deitz, D Zhang, H Dou, J Shen, Z Hu, X Zhang, ... Advanced Materials Interfaces 10 (21), 2300150, 2023 | 3 | 2023 |
Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon JP Barnard, RL Paldi, M Kalaswad, Z He, H Dou, Y Zhang, J Shen, ... Crystal Growth & Design 23 (4), 2248-2256, 2023 | 3 | 2023 |
Abnormal in-plane epitaxy and formation mechanism of vertically aligned Au nanopillars in self-assembled CeO 2–Au metamaterial systems J Lu, D Zhang, RL Paldi, Z He, P Lu, J Deitz, A Ahmad, H Dou, X Wang, ... Materials Horizons 10 (8), 3101-3113, 2023 | 3 | 2023 |
Optical dielectric properties of HfO2-based films H Dou, N Strkalj, Y Zhang, JL MacManus-Driscoll, Q Jia, H Wang Journal of Vacuum Science & Technology A 40 (3), 2022 | 3 | 2022 |
Creating Ferromagnetic Insulating La0.9Ba0.1MnO3 Thin Films by Tuning Lateral Coherence Length C Yun, W Li, X Gao, H Dou, T Maity, X Sun, R Wu, Y Peng, J Yang, ... ACS Applied Materials & Interfaces 13 (7), 8863-8870, 2021 | 3 | 2021 |
Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off J Zhang, Z Zhang, H Dou, Z Lin, K Xu, W Yang, X Zhang, H Wang, PD Ye 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 1 | 2023 |