| Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ... IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016 | 71 | 2016 |
| Structural and electrical characterization of HBr/O2 plasma damage to Si substrate M Fukasawa, Y Nakakubo, A Matsuda, Y Takao, K Eriguchi, K Ono, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (4 …, 2011 | 55 | 2011 |
| Effects of plasma-induced Si recess structure on n-MOSFET performance degradation K Eriguchi, A Matsuda, Y Nakakubo, M Kamei, H Ohta, K Ono IEEE Electron Device Letters 30 (7), 712-714, 2009 | 55 | 2009 |
| Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring Y Nakakubo, A Matsuda, M Fukasawa, Y Takao, T Tatsumi, K Eriguchi, ... Japanese Journal of Applied Physics 49 (8S1), 08JD02, 2010 | 54 | 2010 |
| Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates K Eriguchi, Y Nakakubo, A Matsuda, Y Takao, K Ono Japanese Journal of Applied Physics 49 (5R), 056203, 2010 | 47 | 2010 |
| Modeling of ion-bombardment damage on Si surfaces for in-line analysis A Matsuda, Y Nakakubo, Y Takao, K Eriguchi, K Ono Thin Solid Films 518 (13), 3481-3486, 2010 | 47 | 2010 |
| Plasma-induced defect-site generation in si substrate and its impact on performance degradation in scaled MOSFETs K Eriguchi, Y Nakakubo, A Matsuda, Y Takao, K Ono IEEE Electron Device Letters 30 (12), 1275-1277, 2009 | 41 | 2009 |
| Effects of straggling of incident ions on plasma-induced damage creation in “fin”-type field-effect transistors K Eriguchi, A Matsuda, Y Takao, K Ono Japanese Journal of Applied Physics 53 (3S2), 03DE02, 2014 | 37 | 2014 |
| Interface-state capture cross section—Why does it vary so much? JT Ryan, A Matsuda, JP Campbell, KP Cheung Applied Physics Letters 106 (16), 163503, 2015 | 35 | 2015 |
| Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization … K Eriguchi, Y Nakakubo, A Matsuda, M Kamei, Y Takao, K Ono Japanese Journal of Applied Physics 50 (8S2), 08KD04, 2011 | 23 | 2011 |
| A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site K Eriguchi, Y Nakakubo, A Matsuda, M Kamei, H Ohta, H Nakagawa, ... 2008 IEEE International Electron Devices Meeting, 2008 | 19* | 2008 |
| Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices B Vermang, G Brammertz, M Meuris, T Schnabel, E Ahlswede, ... Sustainable Energy & Fuels 3 (9), 2246-2259, 2019 | 18 | 2019 |
| Materials Data Platform – a FAIR System for Data-Driven Materials Science M Tanifuji, A Matsuda, H Yoshikawa 2019 8th International Congress on Advanced Applied Informatics (IIAI-AAI …, 2019 | 17 | 2019 |
| Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors K Eriguchi, Y Nakakubo, A Matsuda, M Kamei, Y Takao, K Ono Japanese Journal of Applied Physics 49 (8S1), 08JC02, 2010 | 13 | 2010 |
| Raw-to-repository characterization data conversion for repeatable, replicable, and reproducible measurements M Suzuki, H Nagao, Y Harada, H Shinotsuka, K Watanabe, A Sasaki, ... Journal of Vacuum Science & Technology A 38 (2), 023204, 2020 | 12 | 2020 |
| Chemical Synthesis of Multilayered Nanostructured Perovskite Thin Films with Dielectric Features for Electric Capacitors MB Zakaria, T Nagata, A Matsuda, Y Yasuhara, A Ogura, MSA Hossain, ... ACS Applied Nano Materials 1 (2), 915-921, 2018 | 12 | 2018 |
| Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors K Eriguchi, Y Nakakubo, A Matsuda, M Kamei, Y Takao, K Ono Japanese Journal of Applied Physics 49 (4S), 04DA18, 2010 | 11 | 2010 |
| Atomistic simulations of plasma process-induced Si substrate damage-Effects of substrate bias-power frequency A Matsuda, Y Nakakubo, Y Takao, K Eriguchi, K Ono Proceedings of 2013 International Conference on IC Design & Technology …, 2013 | 10 | 2013 |
| Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy A Matsuda, Y Nakakubo, Y Takao, K Eriguchi, K Ono Japanese Journal of Applied Physics 50 (8S2), 08KD03, 2011 | 9 | 2011 |
| Influence of lucky defect distributions on early TDDB failures in SiC power MOSFETs J Chbili, Z Chbili, A Matsuda, KP Cheung, JT Ryan, JP Campbell, ... 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017 | 6 | 2017 |
Koji EriguchiKyoto UniversityVerified email at kyoto-u.ac.jp
