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Paolo Lorenzi
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Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
1112011
l-DOPA and Freezing of Gait in Parkinson’s Disease: Objective Assessment through a Wearable Wireless System
A Suppa, A Kita, G Leodori, A Zampogna, E Nicolini, P Lorenzi, R Rao, ...
Frontiers in neurology 8, 406, 2017
752017
Mobile devices for the real-time detection of specific human motion disorders
P Lorenzi, R Rao, G Romano, A Kita, F Irrera
IEEE Sensors Journal 16 (23), 8220-8227, 2016
522016
Forming Kinetics in -Based RRAM Cells
P Lorenzi, R Rao, F Irrera
IEEE transactions on electron devices 60 (1), 438-443, 2012
522012
Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs
V Jousseaume, A Fantini, JF Nodin, C Guedj, A Persico, J Buckley, ...
2010 IEEE International Memory Workshop, 1-4, 2010
392010
Reliable and robust detection of freezing of gait episodes with wearable electronic devices
A Kita, P Lorenzi, R Rao, F Irrera
IEEE Sensors Journal 17 (6), 1899-1908, 2017
272017
Smart sensors for the recognition of specific human motion disorders in Parkinson's disease
P Lorenzi, R Rao, G Romano, A Kita, M Serpa, F Filesi, F Irrera, ...
2015 6th international workshop on advances in sensors and interfaces (IWASI …, 2015
202015
Smart sensing systems for the detection of human motion disorders
P Lorenzi, R Rao, G Romano, A Kita, M Serpa, F Filesi, R Parisi, A Suppa, ...
Procedia engineering 120, 324-327, 2015
202015
Role of the electrode metal, waveform geometry, temperature, and postdeposition treatment on SET and RESET of HfO2-based resistive random access memory 1R-cells: Experimental …
P Lorenzi, R Rao, F Irrera
Journal of Vacuum Science & Technology B 33 (1), 2015
192015
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM
P Lorenzi, R Rao, T Prifti, F Irrera
Microelectronics Reliability 53 (9-11), 1203-1207, 2013
152013
Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress
P Lorenzi, R Rao, F Irrera
Microelectronics Reliability 55 (9-10), 1446-1449, 2015
112015
Electron-Related Phenomena at theInterface
R Rao, P Lorenzi, G Ghidini, F Palma, F Irrera
IEEE transactions on electron devices 57 (3), 637-643, 2010
112010
Memristor based neuromorphic circuit for visual pattern recognition
P Lorenzi, V Sucre, G Romano, R Rao, F Irrera
2015 International Conference on Memristive Systems (MEMRISYS), 1-2, 2015
102015
A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures
P Lorenzi, R Rao, F Irrera, J Suñé, E Miranda
Applied Physics Letters 107 (11), 2015
82015
Wearable wireless inertial sensors for long-time monitoring of specific motor symptoms in parkinson’s disease
P Lorenzi, R Rao, A Suppa, A Kita, R Parisi, G Romano, A Berardelli, ...
International Conference on Biomedical Electronics and Devices 2, 168-173, 2015
82015
Emerging resistive switching memories and neuromorphic applications
P Lorenzi
La Sapienza, Universit degli studi di Roma, 2017
52017
Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells
P Lorenzi, R Rao, F Irrera
2012 4th IEEE International Memory Workshop, 1-4, 2012
42012
Smart Sensing System for the Detection of Specific Human Motion Symptoms of the Parkinson's Disease.
A Kita, P Lorenzi, G Romano, R Rao, R Parisi, A Suppa, M Bologna, ...
BIODEVICES, 152-159, 2016
32016
Advanced methodology for electrical characterization of metal/high-k interfaces
R Rao, P Lorenzi, F Irrera
Journal of Vacuum Science & Technology B 32 (3), 2014
22014
Charge trapping non volatile memory
P Lorenzi, R Rao, G Ghidini, F Palma, F Irrera
ECS Transactions 25 (7), 269, 2009
12009
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