Contact Engineering High-Performance n-Type MoTe2 Transistors MJ Mleczko, AC Yu, CM Smyth, V Chen, YC Shin, S Chatterjee, YC Tsai, ... Nano letters 19 (9), 6352-6362, 2019 | 112 | 2019 |
Unipolar n-type black phosphorus transistors with low work function contacts CH Wang, JAC Incorvia, CJ McClellan, AC Yu, MJ Mleczko, E Pop, ... Nano letters 18 (5), 2822-2827, 2018 | 49 | 2018 |
Understanding metastability in SAR ADCs: part II: asynchronous A Yu, D Bankman, K Zheng, B Murmann IEEE Solid-State Circuits Magazine 11 (3), 16-32, 2019 | 29 | 2019 |
Heterogeneous Integration of BEOL Logic and Memory in a Commercial Foundry: Multi-Tier Complementary Carbon Nanotube Logic and Resistive RAM at a 130 nm node T Srimani, G Hills, M Bishop, C Lau, P Kanhaiya, R Ho, A Amer, M Chao, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 24 | 2020 |
Carbon Nanotubes for Radiation-Tolerant Electronics PS Kanhaiya, A Yu, R Netzer, W Kemp, D Doyle, MM Shulaker ACS nano 15 (11), 17310-17318, 2021 | 13 | 2021 |
Understanding Metastability in SAR ADCs: Part I: Synchronous D Bankman, A Yu, K Zheng, B Murmann IEEE Solid-State Circuits Magazine 11 (2), 86-97, 2019 | 12 | 2019 |
Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction T Srimani, J Ding, A Yu, P Kanhaiya, C Lau, R Ho, J Humes, CT Kingston, ... Advanced Electronic Materials 8 (9), 2101377, 2022 | 7 | 2022 |
Vertical Sidewall MoS2 Growth and Transistors CJ McClellan, CY Andrew, CH Wang, HSP Wong, E Pop 2019 Device Research Conference (DRC), 65-66, 2019 | 7 | 2019 |
Lift-off-Free Complementary Carbon Nanotube FETs Fabricated With Conventional Processing in a Silicon Foundry T Srimani, AC Yu, B Benton, M Nelson, MM Shulaker 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 4 | 2022 |
Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process CY Andrew, T Srimani, C Lau, B Benton, M Nelson, MM Shulaker IEEE Electron Device Letters 43 (3), 486-489, 2022 | 3 | 2022 |
Foundry Monolithic 3D BEOL Transistor+ Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+ RRAM vs. FEOL Silicon FET+ RRAM T Srimani, AC Yu, RM Radway, DT Rich, M Nelson, S Wong, D Murphy, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
Manufacturing Methodology for Carbon Nanotube Electronics C Lau, G Hills, MD Bishop, T Srimani, R Ho, P Kanhaiya, A Yu, A Amer, ... 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | 1 | 2020 |
N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+ Memory Ultra-Dense 3D, 3D Thermal Scaffolding T Srimani, A Bechdolt, S Choi, C Gilardi, A Kasperovich, S Li, Q Lin, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |