| Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching TW Kim, JI Song, JH Jang, DH Kim, SD Park, JW Bae, GY Yeom Applied physics letters 91 (10), 2007 | 163 | 2007 |
| Effect of pavement design parameters on the behaviour of orthotropic steel bridge deck pavements under traffic loading TW Kim, J Baek, HJ Lee, SY Lee International Journal of Pavement Engineering 15 (5), 471-482, 2014 | 84 | 2014 |
| Advanced gate technologies for state-of-the-art fTin AlGaN/GaN HEMTs JW Chung, TW Kim, T Palacios 2010 International Electron Devices Meeting, 30.2. 1-30.2. 4, 2010 | 72 | 2010 |
| Fatigue performance evaluation of SBS modified mastic asphalt mixtures TW Kim, J Baek, HJ Lee, JY Choi Construction and Building Materials 48, 908-916, 2013 | 66 | 2013 |
| InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ... 2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013 | 61 | 2013 |
| Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim Micromachines 10 (6), 361, 2019 | 56 | 2019 |
| A simple fatigue performance model of asphalt mixtures based on fracture energy Q Li, HJ Lee, TW Kim Construction and Building Materials 27 (1), 605-611, 2012 | 56 | 2012 |
| Atomic layer etching of InP using a low angle forward reflected Ne neutral beam SD Park, CK Oh, JW Bae, GY Yeom, TW Kim, JI Song, JH Jang Applied physics letters 89 (4), 2006 | 56 | 2006 |
| Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 54 | 2009 |
| Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ... IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013 | 49 | 2013 |
| Pharmaceutical composition for preventing and treating diabetes or glucose control abnormality comprising Ginsenosides SS Woo, DS Kim, SG Do, YC Lee, MS Oh, JM Cha, JH Kim, TW Kim US Patent 7,985,848, 2011 | 47 | 2011 |
| Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz HB Jo, DY Yun, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... Applied Physics Express 12 (5), 054006, 2019 | 45 | 2019 |
| A self-aligned InGaAs quantum-well metal–oxide–semiconductor field-effect transistor fabricated through a lift-off-free front-end process J Lin, TW Kim, DA Antoniadis, JA del Alamo Applied Physics Express 5 (6), 064002, 2012 | 44 | 2012 |
| 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics TW Kim, DH Kim, JA del Alamo 2010 International Electron Devices Meeting, 30.7. 1-30.7. 4, 2010 | 44 | 2010 |
| Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ... 2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013 | 43 | 2013 |
| ETB-QW InAs MOSFET with scaled body for improved electrostatics TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ... 2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012 | 40 | 2012 |
| nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and of 559 GHz HB Jo, JM Baek, DY Yun, SW Son, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (11), 1640-1643, 2018 | 37 | 2018 |
| L-nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2Gate-Stack TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ... IEEE Electron Device Letters 36 (3), 223-225, 2015 | 35 | 2015 |
| InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax TW Kim, RJW Hill, CD Young, D Veksler, L Morassi, S Oktybrshky, J Oh, ... 2012 Symposium on VLSI Technology (VLSIT), 179-180, 2012 | 35 | 2012 |
| Evaluation of the anti-obesity activity of Platycodon grandiflorum root and Curcuma longa root fermented with Aspergillus oryzae YH Kang, KK Kim, TW Kim, CS Yang, M Choe Korean Journal of Food Science and Technology 47 (1), 111-118, 2015 | 32 | 2015 |
Dae-Hyun KIMAssociate Professor, College of IT Engineering, School of Electronics Engineering, SemiconductorVerified email at ee.knu.ac.kr
