Follow
ahmed chakroun
ahmed chakroun
3IT: Institut Interdisciplinaire d'Innovation Technologique, Université de Sherbrooke
Verified email at usherbrooke.ca
Title
Cited by
Cited by
Year
Optimized Pre-Treatment Process for MOS-GaN Devices Passivation
A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad
IEEE Electron Device Letters 35 (3), 318-320, 2014
362014
Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer
A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher
physica status solidi (a) 214 (8), 1600836, 2017
292017
AlGaN/GaN MOS-HEMT device fabricated using a high quality PECVD passivation process
A Chakroun, A Jaouad, A Soltani, O Arenas, V Aimez, R Arès, H Maher
IEEE Electron Device Letters 38 (6), 779-782, 2017
242017
Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement
A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ...
IEEE Electron Device Letters 38 (2), 240-243, 2016
242016
A Hydrogen plasma treatment for soft and selective silicon nitride etching
M Bouchilaoun, A Soltani, A Chakroun, A Jaouad, M Darnon, F Boone, ...
physica status solidi (a) 215 (9), 1700658, 2018
122018
Leishmania major large RAB GTPase is highly immunogenic in individuals immune to cutaneous and visceral leishmaniasis
R Chamakh-Ayari, M Chenik, AS Chakroun, N Bahi-Jaber, K Aoun, ...
Parasites & Vectors 10, 1-11, 2017
112017
Screening and Characterization of RAPD Markers in Viscerotropic Leishmania Parasites
I Mkada–Driss, R Lahmadi, AS Chakroun, C Talbi, S Guerbouj, M Driss, ...
PLoS One 9 (10), e109773, 2014
92014
High power normally-OFF GaN/AlGaN HEMT with regrown p type GaN
G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ...
Energies 14 (19), 6098, 2021
62021
Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors
A Cutivet, M Bouchilaoun, A Chakroun, C Rodriguez, A Soltani, A Jaouad, ...
physica status solidi c 14 (11), 1700225, 2017
42017
Thermal performance assessment in AlGaN/GaN structures by microsensor integration
O Arenas, É Al Alam, A Chakroun, V Aimez, A Jaouad, R Ares, F Boone, ...
2015 10th European Microwave Integrated Circuits Conference (EuMIC), 227-230, 2015
22015
Passivation de la Surface Du Nitrure de Gallium Par Dépôt PECVD D'oxyde de Silicium
A Chakroun
Université de Sherbrooke, 2015
22015
Effective GaN Surface passivation by plasma enhanced chemical vapor deposition of silicon oxide
A Chakroun, A Jaouad, A Giguere, V Aimez, R Ares
International Journal of Nanoscience 11 (04), 1240023, 2012
12012
Differentiation among cutaneous Leishmania species upon amplification of a sequence of dipeptidyl peptidase III encoding gene
H Kbaier-Hachemi, M Barhoumi, AS Chakroun, I Guizani
Archives de L'institut Pasteur de Tunis 85 (1-4), 45-53, 2008
12008
Differenciation des especes responsables de leishmaniose cutanée par une amplification PCR du gene codant pour la dipeptidyl peptidase III
H Kbaier-Hachemi, M Barhoumi, AS Chakroun, MB Fadhel, I Guizani
Archives de l'Institut Pasteur de Tunis 85 (1-4), 45, 2008
12008
A variant of DDRT-PCR using anchored mini-exon primers for identification of differentially expressed sequences in Leishmania infantum
L Turki-Mannoubi, H Kbaier-Hachemi, M Barhoumi, AS Chakroun, ...
Archives de L'institut Pasteur de Tunis 85 (1-4), 29-44, 2008
12008
Handheld Ultra-Fast Duplex Polymerase Chain Reaction Assays and Lateral Flow Detection and Identification of Leishmania Parasites for Cutaneous …
I Bel Hadj Ali, Y Saadi-Ben Aoun, Z Hammami, O Rhouma, AS Chakroun, ...
Pathogens 12 (11), 1292, 2023
2023
Handheld Ultra-Fast duplex PCR assays and Lateral flow detection and identification of Leishmania parasites for cutaneous leishmanisis diagnosis
IBH Ali, YSB Aoun, Z Hammami, O Rhouma, AS Chakroun, I Guizani
Preprints, 2023
2023
Présentation du GIP-CNFM-CIME Nanotech
A Aitoumeri
Abdelhamid Aitoumeri, 2023
2023
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN. Energies 2021, 14, 6098
G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ...
s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021
2021
Characterization and modeling of transient self-heating in GaN HEMTs
A Cutivet, M Bouchilaoun, A Chakroun, A Soltani, A Jaouad, F Boone, ...
12th International Conference on Nitride Semiconductors 2017 (ICNS-12), 2017
2017
The system can't perform the operation now. Try again later.
Articles 1–20