| Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure D Das, DP Panda, B Tongbram, J Saha, V Deviprasad, H Rawool, ... Solar Energy Materials and Solar Cells 185, 549-557, 2018 | 39 | 2018 |
| High performance short wave infrared photodetector using pip quantum dots (InAs/GaAs) validated with theoretically simulated model VP Deviprasad, H Ghadi, D Das, D Panda, H Rawool, V Chavan, ... Journal of Alloys and Compounds 804, 18-26, 2019 | 12 | 2019 |
| Greatly enhanced H 2 S sensitivity using defect-rich titanium oxide films TC Jagadale, V Prasad, NS Ramgir, C Prajapat, UV Patil, A Debnath, ... RSC advances 5 (113), 93081-93088, 2015 | 12 | 2015 |
| Incorporation of quaternary (In0. 22Al0. 22Ga0. 56As) capping in pip QDIPs for efficient minimization of hole-assisted dark current VP Deviprasad, S Mondal, S Paul, B Tongbram, D Das, D Panda, ... Infrared Physics & Technology 103, 103079, 2019 | 6 | 2019 |
| Spatial optimization of modulation doping in PIP QDIPs: towards achieving higher operating temperature VP Deviprasad, D Das, B Tongbram, D Panda, S Paul, S Mondal, ... IEEE Transactions on Nanotechnology 19, 247-254, 2019 | 5 | 2019 |
| Room temperature operation and low dark current of In0. 15Ga0. 85As/InAs/In0. 15Ga0. 85As dot-in-well short-wave infrared photodetector: Experimental and theoretical correlation VP Deviprasad, D Panda, S Paul, S Mondal, J Saha, D Das, B Tongbram, ... Superlattices and Microstructures 148, 106715, 2020 | 3 | 2020 |
| Impact of ternary capping on pip InAs/GaAs quantum-dot infrared photodetectors VP Deviprasad, H Ghadi, D Das, D Panda, S Chakrabarti Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI …, 2019 | 2 | 2019 |
| Formation of strain reduced In0. 54Al0. 34Ga0. 12As layer of vertically coupled QDs arrays for O-band telecom single photon sources B Tongbram, VP Deviprasad, AV Kumbhar, S Sengupta, S Chakrabarti Journal of Alloys and Compounds 960, 170617, 2023 | 1 | 2023 |
| Modelling of dark current and noise dependence on capping thickness in quantum dots based infrared photodetectors VP Deviprasad, H Ghadi, S Sahoo, S Chakrabarti Infrared Technology and Applications XLIV 10624, 134-141, 2018 | 1 | 2018 |
| Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region VP Deviprasad, H Ghadi, D Das, D Panda, V Chavan, P Raut, A Aanand, ... Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI …, 2019 | | 2019 |
| Influence of modulation doping on pip quantum-dots (InAs/GaAs)-based infrared detector performance VP Deviprasad, H Ghadi, D Das, D Panda, V Chavan, P Raut, A Aanand, ... Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI …, 2019 | | 2019 |
| Impact of ultra-thin quaternary capping on modulation doped pip quantum dots (InAs/GaAs) based infrared detector VP Deviprasad, H Ghadi, D Das, D Panda, S Chakrabarti Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI …, 2019 | | 2019 |
| Short wave infrared photodetector using pip quantum dots (InAs/GaAs) for high temperature operation VP Deviprasad, H Ghadi, D Das, D Panda, H Rawool, S Chakrabarti Infrared Technology and Applications XLIV 10624, 180-187, 2018 | | 2018 |
| The Depth Investigation on the Formation of Strain Reduced In0. 54al0. 34ga0. 12as Layer of Vertically Coupled Qds Arrays for O-Band Telecom Lasers B Tongbram, VP Deviprasad, AV Kumbhar, S Sengupta, S Chakrabarti Available at SSRN 4122875, 0 | | |
