| Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors VO Turin, AA Balandin Journal of Applied Physics 100 (5), 2006 | 141 | 2006 |
| Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface VO Turin, AA Balandin Electronics Letters 40 (1), 81-83, 2004 | 98 | 2004 |
| A modified transferred-electron high-field mobility model for GaN devices simulation VO Turin Solid-state electronics 49 (10), 1678-1682, 2005 | 68 | 2005 |
| Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation VO Turin, AV Sedov, GI Zebrev, B Iñiguez, MS Shur International Conference on Micro-and Nano-Electronics 2009 7521, 480-488, 2010 | 28 | 2010 |
| Coulomb disintegration of weak electron fluxes and the photocounts VP Bykov, AV Gerasimov, VO Turin Physics-Uspekhi 38 (8), 911, 1995 | 27 | 1995 |
| Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling GI Zebrev, RG Useinov, AS Vatuev, VV Emeliyanov, VS Anashin, ... | 23 | 2013 |
| The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model V Turin, G Zebrev, S Makarov, B Iñiguez, M Shur International Journal of Numerical Modelling: Electronic Networks, Devices …, 2014 | 21 | 2014 |
| Numerical analysis of radio-frequency single-electron transistor operation VO Turin, AN Korotkov Physical Review B 69 (19), 195310-1-13, 2004 | 21 | 2004 |
| Numerical analysis of the radio-frequency single-electron transistor operation VO Turin, AN Korotkov arXiv preprint cond-mat/0308218 / Phys. Rev. B 69 (19), 195310, 2003 | 21 | 2003 |
| Analysis of the radio-frequency single-electron transistor with large quality factor VO Turin, AN Korotkov Virtual Journal of Nanoscale Science & Technology 8 (15), 2003 | 21 | 2003 |
| Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors VO Turin, MS Shur, DB Veksler International Journal of High Speed Electronics and Systems 17 (01), 19-23, 2007 | 14 | 2007 |
| The ambient temperature effect on current-voltage characteristics of surface-passivated GaN-based field-effect transistors WL Liu, VO Turin, AA Balandin, YL Chen, KL Wang Materials Research Society Internet Journal of Nitride Semiconductor …, 2004 | 14 | 2004 |
| Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor V Turin, A Balandin 2005 MRS Fall Meeting, 0892-FF13-05, 2005 | 11 | 2005 |
| An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing VO Turin, BA Rakhmatov, CH Kim, B Iñiguez IOP Conference Series: Materials Science and Engineering 151 (1), 012044, 2016 | 9 | 2016 |
| Physics-based compact modeling of double-gate graphene field-effect transistor operation GI Zebrev, AA Tselykovskiy, VO Turin 2012 28th International Conference on Microelectronics Proceedings, 237-240, 2012 | 9 | 2012 |
| A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime V Turin, R Shkarlat, V Poyarkov, O Kshensky, G Zebrev, B Iñiguez, M Shur International Conference on Micro-and Nano-Electronics 2018 11022, 114-122, 2019 | 7 | 2019 |
| Aberration of light and matter wave VO Turin, OI Markov, VN Poyarkov Современные проблемы физико-математических наук, 199-207, 2018 | 7 | 2018 |
| Modelling of saturation current of an organic field-effect transistor with accounting for contact resistances VO Turin, BA Rakhmatov, GI Zebrev, CH Kim, B Iñiguez, MS Shur IOP Conference Series: Materials Science and Engineering 498 (1), 012038, 2019 | 6 | 2019 |
| Корректный учет ненулевой дифференциальной проводимости в режиме насыщения в компактной модели полевого нанотранзистора ВО Турин, ГИ Зебрев, Б Инигез, МС Шур Наноинженерия, 41-48, 2012 | 6 | 2012 |
| Electronic wave packets in vacuum photodetectors and the possibility of observing them VP Bykov, AM Prokhorov, VO Turin, SL Chin Journal of Experimental and Theoretical Physics Letters 63, 429-432, 1996 | 6 | 1996 |
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
