| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 124518, 2011 | 540 | 2011 |
| Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures M Lanza, K Zhang, M Porti, M Nafria, ZY Shen, LF Liu, JF Kang, D Gilmer, ... Applied Physics Letters 100 (12), 123508, 2012 | 228 | 2012 |
| Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich Applied Physics Letters 101 (19), 193502, 2012 | 202 | 2012 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 19.6. 1-19.6. 4, 2010 | 163 | 2010 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 154 | 2011 |
| Electrical characterization of stressed and broken down films at a nanometer scale using a conductive atomic force microscope M Porti, M Nafrıa, X Aymerich, A Olbrich, B Ebersberger Journal of applied physics 91 (4), 2071-2079, 2002 | 139 | 2002 |
| Grain boundary mediated leakage current in polycrystalline HfO2 films K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker Microelectronic Engineering 88 (7), 1272-1275, 2011 | 123 | 2011 |
| Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker Journal of Applied Physics 114 (13), 134503, 2013 | 89 | 2013 |
| Nanometer-scale electrical characterization of stressed ultrathin films using conducting atomic force microscopy M Porti, M Nafrıa, X Aymerich, A Olbrich, B Ebersberger Applied Physics Letters 78 (26), 4181-4183, 2001 | 72 | 2001 |
| Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures V Iglesias, M Porti, M Nafría, X Aymerich, P Dudek, T Schroeder, ... Applied Physics Letters 97 (26), 262906, 2010 | 71 | 2010 |
| Graphene‐Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization M Lanza, A Bayerl, T Gao, M Porti, M Nafria, GY Jing, YF Zhang, ZF Liu, ... Advanced Materials 25 (10), 1440-1444, 2013 | 70 | 2013 |
| Tuning graphene morphology by substrate towards wrinkle-free devices: experiment and simulation M Lanza, Y Wang, A Bayerl, T Gao, M Porti, M Nafria, H Liang, G Jing, ... Journal of Applied Physics 113 (10), 104301, 2013 | 68 | 2013 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 213504, 2011 | 60 | 2011 |
| Current limited stresses of SiO/sub 2/gate oxides with conductive atomic force microscope M Porti, M Nafria, X Aymerich IEEE Transactions on Electron Devices 50 (4), 933-940, 2003 | 56 | 2003 |
| Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress V Iglesias, M Lanza, K Zhang, A Bayerl, M Porti, M Nafría, X Aymerich, ... Applied physics letters 99 (10), 103510, 2011 | 51 | 2011 |
| Nanometer-scale analysis of current limited stresses impact on SiO/sub 2/gate oxide reliability using C-AFM M Porti, M Nafria, X Aymerich IEEE transactions on nanotechnology 3 (1), 55-60, 2004 | 51 | 2004 |
| Electrical and mechanical performance of graphene sheets exposed to oxidative environments M Lanza, Y Wang, T Gao, A Bayerl, M Porti, M Nafria, Y Zhou, G Jing, ... Nano Research 6 (7), 485-495, 2013 | 48 | 2013 |
| Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces M Lanza, M Porti, M Nafría, X Aymerich, E Whittaker, B Hamilton Review of Scientific Instruments 81 (10), 106110, 2010 | 47 | 2010 |
| Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy V Iglesias, M Porti, M Nafría, X Aymerich, P Dudek, G Bersuker Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011 | 45 | 2011 |
| UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre-and post-breakdown electrical measurements M Lanza, M Porti, M Nafría, X Aymerich, E Whittaker, B Hamilton Microelectronics Reliability 50 (9-11), 1312-1315, 2010 | 45 | 2010 |
