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Lok Yi Lee
Lok Yi Lee
Verified email at cam.ac.uk - Homepage
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Cited by
Year
X-ray diffraction analysis of cubic zincblende III-nitrides
M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ...
Journal of Physics D: Applied Physics 50 (43), 433002, 2017
662017
Cubic zincblende gallium nitride for green-wavelength light-emitting diodes
LY Lee
Materials Science and Technology 33 (14), 1570-1583, 2017
352017
Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
LY Lee, M Frentrup, MJ Kappers, RA Oliver, CJ Humphreys, DJ Wallis
Journal of Applied Physics 124 (10), 2018
252018
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM
LY Lee, M Frentrup, P Vacek, MJ Kappers, DJ Wallis, RA Oliver
Journal of Applied Physics 125 (10), 2019
222019
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes
Z Weng, SC Dixon, LY Lee, CJ Humphreys, I Guiney, O Fenwick, ...
Advanced Optical Materials 10 (3), 2101675, 2022
152022
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
SA Church, S Hammersley, PW Mitchell, MJ Kappers, LY Lee, ...
Journal of Applied Physics 123 (18), 2018
142018
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
P Vacek, M Frentrup, LY Lee, FCP Massabuau, MJ Kappers, DJ Wallis, ...
Journal of Applied Physics 129 (15), 2021
122021
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
LY Lee, M Frentrup, P Vacek, FCP Massabuau, MJ Kappers, DJ Wallis, ...
Journal of Crystal Growth 524, 125167, 2019
72019
Structural Characterisation of Heteroepitaxial Zincblende Gallium Nitride
LY Lee
12019
Method of producing an electronic device precursor
R Baines, LY Lee, H Glass
US Patent App. 18/268,567, 2024
2024
Wafer-scale transfer-free graphene as an ITO replacement for OLEDs
Z Weng, S Dixon, LY Lee, CJ Humphreys, I Guiney, O Fenwick, WP Gillin
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 94-95, 2023
2023
Method of providing contacts on a graphene sheet
LY Lee, H Glass, S Thomas, I Guiney
US Patent App. 17/533,540, 2022
2022
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)
Z Weng, SC Dixon, LY Lee, CJ Humphreys, I Guiney, O Fenwick, ...
Advanced Optical Materials 10 (3), 2270012, 2022
2022
Research data supporting" Defect structures in (001) zincblende GaN/3C-SiC nucleation layers"
P Vacek, M Frentrup, LY Lee, FCP Massabuau, MJ Kappers, DJ Wallis, ...
2021
Research data supporting" Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN"
LY Lee, M Frentrup, M Kappers, R Oliver, C Humphreys, D Wallis
2018
Research data supporting" X-ray diffraction analysis of cubic zincblende III-nitrides"
M Frentrup, LY Lee
2017
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