| Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 2008 | 207 | 2008 |
| Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone L Cheng, X Qin, AT Lucero, A Azcatl, J Huang, RM Wallace, K Cho, J Kim ACS applied materials & interfaces 6 (15), 11834-11838, 2014 | 142 | 2014 |
| Partially fluorinated graphene: structural and electrical characterization L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ... ACS Applied Materials & Interfaces 8 (7), 5002-5008, 2016 | 93 | 2016 |
| Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics P Sivasubramani, TS Boscke, J Huang, CD Young, PD Kirsch, ... 2007 IEEE Symposium on VLSI Technology, 68-69, 2007 | 81 | 2007 |
| Molecular layer deposition of APTES on silicon nanowire biosensors: Surface characterization, stability and pH response Y Liang, J Huang, P Zang, J Kim, W Hu Applied surface science 322, 202-208, 2014 | 65 | 2014 |
| Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow RJW Hill, C Park, J Barnett, J Price, J Huang, N Goel, WY Loh, J Oh, ... 2010 International Electron Devices Meeting, 6.2. 1-6.2. 4, 2010 | 49 | 2010 |
| Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD L Cheng, K Yun, A Lucero, J Huang, X Meng, G Lian, HS Nam, ... Journal of Materials Chemistry C 3 (20), 5192-5198, 2015 | 44 | 2015 |
| Area-Selective ALD of TiO2 Nanolines with Electron-Beam Lithography J Huang, M Lee, A Lucero, L Cheng, J Kim The Journal of Physical Chemistry C 118 (40), 23306-23312, 2014 | 41 | 2014 |
| A novel methodology on tuning work function of metal gate using stacking bi-metal layers IS Jeon, J Lee, P Zhao, P Sivasubramani, T Oh, HJ Kim, D Cha, J Huang, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 41 | 2004 |
| Selective atomic layer deposition with electron-beam patterned self-assembled monolayers J Huang, M Lee, J Kim Journal of Vacuum Science & Technology A 30 (1), 2012 | 28 | 2012 |
| In‐situ X‐ray photoelectron spectroscopy of trimethyl aluminum and water half‐cycle treatments on HF‐treated and O3‐oxidized GaN substrates P Sivasubramani, TJ Park, BE Coss, A Lucero, J Huang, B Brennan, ... physica status solidi (RRL)–Rapid Research Letters 6 (1), 22-24, 2012 | 26 | 2012 |
| Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD) J Huang, H Zhang, A Lucero, L Cheng, KC Santosh, J Wang, J Hsu, ... Journal of Materials Chemistry C 4 (12), 2382-2389, 2016 | 20 | 2016 |
| Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition J Huang, AT Lucero, L Cheng, HJ Hwang, MW Ha, J Kim Applied Physics Letters 106 (12), 2015 | 20 | 2015 |
| Device and reliability improvement of HfSiON+ LaOx/Metal gate stacks for 22nm node application J Huang, PD Kirsch, D Heh, CY Kang, G Bersuker, M Hussain, P Majhi, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 19 | 2008 |
| Organic‐Inorganic Hybrid Nano‐laminates Fabricated by Ozone‐assisted Molecular‐atomic Layer Deposition J Huang, M Lee, A Lucero, J Kim Chemical Vapor Deposition 19 (4‐6), 142-148, 2013 | 17 | 2013 |
| The impact of La-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions CY Kang, CD Young, J Huang, P Kirsch, D Heh, P Sivasubramani, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 13 | 2008 |
| Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT J Huang, PD Kirsch, J Oh, SH Lee, J Price, P Majhi, HR Harris, DC Gilmer, ... 2008 Symposium on VLSI Technology, 82-83, 2008 | 13 | 2008 |
| 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors J Huang, M Lee, AT Lucero, L Cheng, MW Ha, J Kim Japanese Journal of Applied Physics 55 (6S1), 06GK04, 2016 | 10 | 2016 |
| Three-dimensional observation of TiO2 nanostructures by electron tomography YJ Suh, N Lu, SY Park, TH Lee, SH Lee, DK Cha, MG Lee, J Huang, ... Micron 46, 35-42, 2013 | 9 | 2013 |
| Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond P Sivasubramani, PD Kirsch, J Huang, C Park, YN Tan, DC Gilmer, ... 2007 IEEE International Electron Devices Meeting, 543-546, 2007 | 9 | 2007 |
