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Pedro Cartujo Cassinello
Pedro Cartujo Cassinello
Profesor de Electrónica, Universidad de Granada
Verified email at ugr.es
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Cited by
Year
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA López-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
1561999
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
1012000
Effects of the inversion layer centroid on MOSFET behavior
JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
991997
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
852002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
802001
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
651999
Remotely piloted aircraft (RPA) in agriculture: A pursuit of sustainability
A Ahmad, J Ordoñez, P Cartujo, V Martos
Agronomy 11 (1), 7, 2020
482020
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
F Gamiz, JB Roldan, A Godoy, P Cartujo-Cassinello, JE Carceller
Journal of applied physics 94 (9), 5732-5741, 2003
362003
Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
F Gamiz, F Jiménez-Molinos, JB Roldan, P Cartujo-Cassinello
Applied physics letters 80 (20), 3835-3837, 2002
322002
Strained-Si on Si/sub 1-x/Ge/sub x/MOSFET mobility model
JB Roldan, F Gamiz, P Cartujo-Cassinello, P Cartujo, JE Carceller, ...
IEEE Transactions on Electron Devices 50 (5), 1408-1411, 2003
262003
Monte Carlo simulation of electron transport in silicon-on-insulator devices
F Gámiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Proc. 10th Int. Symp. SOI Technology Devices, 157-168, 2001
212001
Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
JB Roldan, F Gamiz, JA Lopez-Villanueva, P Cartujo-Cassinello
IEEE Electron Device Letters 21 (5), 239-241, 2000
212000
Electron transport in silicon-on-insulator devices
F Gámiz, JB Roldán, JA López-Villanueva, P Cartujo-Cassinello, ...
Solid-State Electronics 45 (4), 613-620, 2001
132001
Remote surface roughness scattering in ultrathin-oxide MOSFETs
F Gamiz, A Godoy, F Jimenez-Molinos, P Cartujo-Cassinello, JB Roldan
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
112003
Monte Carlo simulation of electron mobility in silicon-on-insulator structures
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Solid-State Electronics 46 (11), 1715-1721, 2002
112002
Silicon-On-Insulator Technology and Devices X
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Electrochem. Soc. Proc., PV-2001-3, Ed. by S. Cristoloveanu et al …, 2001
112001
SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes
F Jiménez-Molinos, G González-Cordero, P Cartujo-Cassinello, ...
2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017
72017
Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, JE Carceller, ...
Applied physics letters 83 (15), 3120-3122, 2003
52003
Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers
F Gamiz, P Cartujo-Cassinello, J Roldan, C Sampedro, A Godoy
Proc. Intern. Symp. on Silicon-on-Insulator Tech. and Devices, 39-44, 2005
42005
Image and exchange-correlation effects in double gate silicon-on-insulator transistors
F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, JE Carceller, ...
Microelectronic engineering 72 (1-4), 374-378, 2004
42004
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