| Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films C Hayzelden, JL Batstone Journal of Applied Physics 73 (12), 8279-8289, 1993 | 596 | 1993 |
| In situ transmission electron microscopy studies of silicide‐mediated crystallization of amorphous silicon C Hayzelden, JL Batstone, RC Cammarata Applied Physics Letters 60 (2), 225-227, 1992 | 237 | 1992 |
| Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors S Myhajlenko, JL Batstone, HJ Hutchinson, JW Steeds Journal of Physics C: Solid State Physics 17 (35), 6477, 1984 | 128 | 1984 |
| Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial CaF 2/Si (111) interface JL Batstone, JM Phillips, EC Hunke Physical review letters 60 (14), 1394, 1988 | 90 | 1988 |
| I n situ study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction JM Gibson, JL Batstone, RT Tung Applied physics letters 51 (1), 45-47, 1987 | 89 | 1987 |
| In situ crystallization of amorphous silicon in the transmission electron microscope JL Batstone Philosophical Magazine A 67 (1), 51-72, 1993 | 83 | 1993 |
| Control of pinholes in epitaxial CoSi2 layers on Si(111) RT Tung, JL Batstone Applied physics letters 52 (8), 648-650, 1988 | 81 | 1988 |
| Mechanisms of buried oxide formation by ion implantation AE White, KT Short, JL Batstone, DC Jacobson, JM Poate, KW West Applied Physics Letters 50 (1), 19-21, 1987 | 81 | 1987 |
| Origin of A-or B-type NiSi i 2 determined by in in situ transmission electron microscopy and diffraction during growth JM Gibson, JL Batstone, RT Tung, FC Unterwald Physical review letters 60 (12), 1158, 1988 | 68 | 1988 |
| In-situ transmission electron microscopy of NiSi2 formation by molecular beam epitaxy JM Gibson, JL Batstone Surface Science 208 (3), 317-350, 1989 | 64 | 1989 |
| Stability of visible luminescence from porous silicon JL Batstone, MA Tischler, RT Collins Applied physics letters 62 (21), 2667-2669, 1993 | 61 | 1993 |
| Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111) JM Phillips, JL Batstone, JC Hensel, M Cerullo Applied physics letters 51 (23), 1895-1897, 1987 | 60 | 1987 |
| Control of epitaxial orientation of Si on CoSi2(111) RT Tung, JL Batstone Applied physics letters 52 (19), 1611-1613, 1988 | 59 | 1988 |
| Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si JM Poate, J Linnros, F Priolo, DC Jacobson, JL Batstone, MO Thompson Physical Review Letters 60 (13), 1322, 1988 | 58 | 1988 |
| Subboundary‐free zone‐melt recrystallization of thin‐film silicon L Pfeiffer, AE Gelman, KA Jackson, KW West, JL Batstone Applied physics letters 51 (16), 1256-1258, 1987 | 53 | 1987 |
| Radiation‐enhanced diffusion of Au in amorphous Si F Priolo, JM Poate, DC Jacobson, J Linnros, JL Batstone, SU Campisano Applied physics letters 52 (15), 1213-1215, 1988 | 46 | 1988 |
| ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films JL Batstone, JM Gibson, RT Tung, AFJ Levi Applied physics letters 52 (10), 828-830, 1988 | 37 | 1988 |
| Microscopic Processes in Crystallisation JL Batstone, C Hayzelden Solid State Phenomena 37, 257-268, 1994 | 34 | 1994 |
| Growth of Thin Epitaxial CoSi2 Layers on Si (100) SM Yalisove, RT Tung, JL Batstone MRS Online Proceedings Library (OPL) 116, 439, 1988 | 33 | 1988 |
| High-resolution electron microscopy of interfaces and surfaces JM Gibson, ML McDonald, JL Batstone, JM Phillips Ultramicroscopy 22 (1-4), 35-46, 1987 | 24 | 1987 |
