Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing Z Wang, M Yin, T Zhang, Y Cai, Y Wang, Y Yang, R Huang Nanoscale 8 (29), 14015-14022, 2016 | 299 | 2016 |
Memory materials and devices: From concept to application Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou InfoMat 2 (2), 261-290, 2020 | 207 | 2020 |
Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation M Yu, Y Cai, Z Wang, Y Fang, Y Liu, Z Yu, Y Pan, Z Zhang, J Tan, X Yang, ... Scientific reports 6, 21020, 2016 | 98 | 2016 |
Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device X Yang, Y Fang, Z Yu, Z Wang, T Zhang, M Yin, M Lin, Y Yang, Y Cai, ... Nanoscale 8 (45), 18897-18904, 2016 | 87 | 2016 |
Dual-Gated MoS2 Neuristor for Neuromorphic Computing L Bao, J Zhu, Z Yu, R Jia, Q Cai, Z Wang, L Xu, Y Wu, Y Yang, Y Cai, ... ACS applied materials & interfaces 11 (44), 41482-41489, 2019 | 85 | 2019 |
Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer Y Fang, Z Yu, Z Wang, T Zhang, Y Yang, Y Cai, R Huang IEEE Electron Device Letters 39 (6), 819-822, 2018 | 73 | 2018 |
Low power parylene‐based memristors with a graphene barrier layer for flexible electronics applications Q Chen, M Lin, Z Wang, X Zhao, Y Cai, Q Liu, Y Fang, Y Yang, M He, ... Advanced Electronic Materials 5 (9), 1800852, 2019 | 72 | 2019 |
Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic Y Yang, M Yin, Z Yu, Z Wang, T Zhang, Y Cai, WD Lu, R Huang Advanced Electronic Materials 3 (7), 1700032, 2017 | 65 | 2017 |
Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics Q Zheng, Z Wang, N Gong, Z Yu, C Chen, Y Cai, Q Huang, H Jiang, Q Xia, ... IEEE Electron Device Letters 40 (8), 1309-1312, 2019 | 48 | 2019 |
Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering Z Wang, J Kang, Z Yu, Y Fang, Y Ling, Y Cai, R Huang, Y Wang Nanotechnology 28 (5), 055204, 2016 | 47 | 2016 |
Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition J Kang, Z Yu, L Wu, Y Fang, Z Wang, Y Cai, Z Ji, J Zhang, R Wang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2017 | 40 | 2017 |
Self-selective resistive device with hybrid switching mode for passive crossbar memory application Z Wang, J Kang, G Bai, G Zhong, B Wang, Y Ling, Q Chen, L Bao, L Wu, ... IEEE Electron Device Letters 41 (7), 1009-1012, 2020 | 36 | 2020 |
Lattice: An ADC/DAC-less ReRAM-based processing-in-memory architecture for accelerating deep convolution neural networks Q Zheng, Z Wang, Z Feng, B Yan, Y Cai, R Huang, Y Chen, CL Yang, ... 2020 57th ACM/IEEE Design Automation Conference (DAC), 1-6, 2020 | 35 | 2020 |
Artificial shape perception retina network based on tunable memristive neurons L Bao, J Kang, Y Fang, Z Yu, Z Wang, Y Yang, Y Cai, R Huang Scientific reports 8 (1), 13727, 2018 | 34 | 2018 |
Flexible polymer device based on parylene-C with memory and temperature sensing functionalities M Lin, Q Chen, Z Wang, Y Fang, J Liu, Y Yang, W Wang, Y Cai, R Huang Polymers 9 (8), 310, 2017 | 29 | 2017 |
Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform Q Chen, Z Wang, M Lin, X Qi, Z Yu, L Wu, L Bao, Y Ling, Y Qin, Y Cai, ... Advanced Electronic Materials 7 (2), 2000864, 2021 | 26 | 2021 |
Self-activation neural network based on self-selective memory device with rectified multilevel states Z Wang, Q Zheng, J Kang, Z Yu, G Zhong, Y Ling, L Bao, S Bao, G Bai, ... IEEE Transactions on Electron Devices 67 (10), 4166-4171, 2020 | 25 | 2020 |
Encapsulation layer design and scalability in encapsulated vertical 3D RRAM M Yu, Y Fang, Z Wang, G Chen, Y Pan, X Yang, M Yin, Y Yang, M Li, ... Nanotechnology 27 (20), 205202, 2016 | 23 | 2016 |
Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si M Yu, Y Fang, Z Wang, Y Pan, M Li, Y Cai, R Huang Journal of Applied Physics 119 (19), 195302, 2016 | 21 | 2016 |
Emulation of Biphasic Plasticity in Retinal Electrical Synapse for Light-Adaptive Pattern Pre-Processing L Wu, Z Wang, B Wang, Q Chen, L Bao, Z Yu, Y Yang, Y Ling, Y Qin, ... Nanoscale 13, 3483-3492, 2021 | 19 | 2021 |