| Fizikani o’qitishda pedagogik ta’lim klasteri metodidan foydalanishga doir tavsiyalar IG Tursunov, SX Berdiyev, MM Usmonov Academic research in educational sciences 2 (5), 1129-1136, 2021 | 40 | 2021 |
| Elektrotexnika fanini o ‘qitishda innovatsion texnologiyalarni qo ‘llash IG Tursunov, UA Eshniyozov Academic research in educational sciences 2 (4), 1030-1040, 2021 | 36 | 2021 |
| “TURLI MUHITLARDA ELEKTR TOKI” MAVZUSINI О'QITISHDAGI INNOVATSIYALAR IG Tursunov, UA Eshniyozov, SA Durdiyeva Academic research in educational sciences 2 (2), 513-523, 2021 | 31 | 2021 |
| Relaxation effects in silicon doped with gold at pulse hydrostatic pressure IG Tursunov, U Eshniyozov EPRA International Journal of Research and Development 5 (5), 440-444, 2020 | 24 | 2020 |
| Динамическая проводимость компенсированного кремния при всестороннем гидростатическом сжатии А Абдураимов, СЗ Зайнабидинов, ОО Маматкаримов, ИГ Турсунов, ... Физика техника и полупроводников, 3, 1993 | 8 | 1993 |
| ASTRONOMIYA KURSINI О ‘QITISHDA ZAMONAVIY ELEKTRON TA’LIM RESURSLARINING AHAMIYATI IG Tursunov, AM Tillaboyev Экономика и социум, 294-299, 2022 | 7 | 2022 |
| Изучение влияния внешних воздействий на поведение примеси золота в кремнии СЗ Зайнабидинов, ОО Маматкаримов, ИГ Турсунов, УА Туйчиев Физика и техника полупроводников 34 (6), 641-643, 2000 | 7 | 2000 |
| Influence of deep-level impurities on the strain electric properties of monocrystalline silicon S Zainabidinov, OO Mamatkarimov, O Khimmatkulov, IG Tursunov Ukrainian journal of physics 62 (11), 957-957, 2017 | 6 | 2017 |
| Investigations of the deep-level parameters in semiconductors IG Tursunov Ukrainian journal of physics 62 (12), 1041-1041, 2017 | 6 | 2017 |
| Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si–Au S Zainabidinov, IG Tursunov, O Khimmatkulov Semiconductors 52, 1027-1030, 2018 | 5 | 2018 |
| Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si–Au Diodes OO Mamatkarimov, O Khimmatkulov, IG Tursunov Semiconductors 54 (5), 563-566, 2020 | 4 | 2020 |
| Dinamicheskaya provodimost kompensirovannogo kremniya pri vsestoronnem gidrostaticheskom szhatii A Abduraimov, SZ Zajnabidinov, OO Mamatkarimov, IG Tursunov, ... FTP, 1993 | 4 | 1993 |
| Dynamic conductivity of compensated silicon subjected to hydrostatic compression A Abduraimov, SZ Zainabidinov, OO Mamatkarimov, IG Tursunov, ... Semiconductors (Woodbury, NY) 27 (3), 290-291, 1993 | 4 | 1993 |
| Higher education pedagogical-psychological support of individual educational trajectories of students IG Tursunov, AU Umbarov Open Access Repository 9 (6), 11-15, 2023 | 3 | 2023 |
| The influence of the profile of impurity distribution on the parameters of varactors subjected to full hydrostatic compression IG Tursunov, BH Kuchkarov Uzbekiston Fizika Zhurnali 18 (5), 322-325, 2016 | 3 | 2016 |
| Dynamic strain conductivity of compensated silicon SZ Zainabidinov, OO Mamatkarimov, IG Tursunov, UA Tuychiev Modern physics letters B 12 (09), 335-341, 1998 | 3 | 1998 |
| Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb–-SiMn–Au ОО Маматкаримов, О Химматкулов, ИГ Турсунов Физика и техника полупроводников 54 (5), 466-469, 2020 | 2 | 2020 |
| About the silicon sensitivity of the deep level with alternating pressure I gulamjonovich Tursunov, AA Okhunov, OO Mamatkarimov IIUM Engineering Journal 19 (2), 164-171, 2018 | 2 | 2018 |
| Tensostimulated effect in a doped and heat-treated silicon at an oriented deformation OO Mamatkarimov, O Khimmatkulov, IG Tursunov Physics of the Solid State 63 (5), 738-741, 2021 | 1 | 2021 |
| Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–-SiMn–Au S Zaynabidinov, IG Tursunov, O Khimmatkulov Fizika i Tekhnika Poluprovodnikov 52 (8), 896-899, 2018 | 1 | 2018 |
