Review of nanosheet transistors technology ,Agha FNAK, Shakib, Mohammed Tikrit Journal of Engineering Sciences 28 (1), 40-48, 2021 | 8 | 2021 |
Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET FNA Agha, Y Hashim, MN Shakib 2020 IEEE International Conference on Semiconductor Electronics (ICSE), 64~61, 2020 | 6 | 2020 |
Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling FNA ,Mohammed Nazmus, Yasir Hashim, Faris Hassan Taha International Journal of Electrical and Computer Engineering 11 (1), 780-787, 2020 | 6 | 2020 |
Temperature characteristics of Gate all around nanowire channel Si-TFET FNA Agha, Y Hashim, WAS Abdullah Journal of Physics: Conference series 1755 (012045), 1-7, 2021 | 5 | 2021 |
Investigation and design of ion-implanted MOSFET based on (18 nm) channel length FN Abdul-kadir, K Mohammad, Y Hashim TELKOMNIKA (Telecommunication, Computing, Electronics and Control) 18 (5 …, 2020 | 5 | 2020 |
Characterization of silicon tunnel field effect transistor based on charge plasma FN Abdul-kadir, FH Taha Indonesian Journal of Electrical Engineering and Computer Science 25 (1 …, 2022 | 2 | 2022 |
Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling Firas Natheer Abdul-kadir, Nawfal Y Jamil, Laith M Al Taan, Waheb A Jabbar International Journal of Electrical and Electronic Engineering …, 2023 | 1* | 2023 |
Optical Properties for CdSe:Cu Thin Film Prepared by Sputtering Method FNA Laith M. Al Taan, Nawfal Y. Jamil International Journal of Latest Engineering and Management Research (IJLEMR …, 2022 | | 2022 |