| Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application M Kobayashi, A Kinoshita, K Saraswat, HSP Wong, Y Nishi Journal of applied physics 105 (2), 2009 | 218 | 2009 |
| Candidate Resonant Tetraneutron State Populated by the Reaction K Kisamori, S Shimoura, H Miya, S Michimasa, S Ota, M Assie, H Baba, ... Physical review letters 116 (5), 052501, 2016 | 213 | 2016 |
| Magic Nature of Neutrons in : First Mass Measurements of S Michimasa, M Kobayashi, Y Kiyokawa, S Ota, DS Ahn, H Baba, ... Physical review letters 121 (2), 022506, 2018 | 140 | 2018 |
| Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO2 M Kobayashi, N Ueyama, K Jang, T Hiramoto 2016 IEEE International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2016 | 117 | 2016 |
| Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process M Kobayashi, Y Tagawa, F Mo, T Saraya, T Hiramoto IEEE Journal of the Electron Devices Society 7, 134-139, 2018 | 114 | 2018 |
| Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface Z Liu, M Kobayashi, BC Paul, Z Bao, Y Nishi Physical Review B 82 (3), 035311, 2010 | 109 | 2010 |
| Negative capacitance for boosting tunnel FET performance M Kobayashi, K Jang, N Ueyama, T Hiramoto IEEE Transactions on Nanotechnology 16 (2), 253-258, 2017 | 103 | 2017 |
| On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2 V supply voltage with ferroelectric HfO2 thin film M Kobayashi, T Hiramoto AIP Advances 6 (2), 2016 | 103 | 2016 |
| Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack M Kobayashi, G Thareja, M Ishibashi, Y Sun, P Griffin, J McVittie, ... Journal of Applied Physics 106 (10), 2009 | 98 | 2009 |
| Towards large size substrates for III-V co-integration made by direct wafer bonding on Si N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ... APL materials 2 (8), 2014 | 90 | 2014 |
| Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors M Kobayashi, T Hiramoto Journal of Applied Physics 103 (5), 2008 | 83 | 2008 |
| High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD Gate Dielectric and Self-Aligned … J Feng, G Thareja, M Kobayashi, S Chen, A Poon, Y Bai, PB Griffin, ... IEEE Electron Device Letters 29 (7), 805-807, 2008 | 82 | 2008 |
| A direct dark matter search in XMASS-I K Abe, K Hiraide, K Ichimura, Y Kishimoto, K Kobayashi, M Kobayashi, ... Physics Letters B 789, 45-53, 2019 | 75 | 2019 |
| A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor M Kobayashi Applied Physics Express 11 (11), 110101, 2018 | 72 | 2018 |
| Low-voltage operating ferroelectric FET with ultrathin IGZO channel for high-density memory application F Mo, Y Tagawa, C Jin, MJ Ahn, T Saraya, T Hiramoto, M Kobayashi IEEE Journal of the Electron Devices Society 8, 717-723, 2020 | 71 | 2020 |
| Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nanoparticles T Kataoka, M Kobayashi, Y Sakamoto, GS Song, A Fujimori, FH Chang, ... Journal of Applied Physics 107 (3), 2010 | 66 | 2010 |
| Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application F Mo, Y Tagawa, C Jin, MJ Ahn, T Saraya, T Hiramoto, M Kobayashi 2019 Symposium on VLSI Technology, T42-T43, 2019 | 65 | 2019 |
| p-Channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si HY Yu, M Ishibashi, JH Park, M Kobayashi, KC Saraswat IEEE electron device letters 30 (6), 675-677, 2009 | 65 | 2009 |
| Isomer Decay Spectroscopy of and : Midshell Collectivity Around Z Patel, PA Söderström, Z Podolyák, PH Regan, PM Walker, H Watanabe, ... Physical review letters 113 (26), 262502, 2014 | 64 | 2014 |
| Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0. 53Ga0. 47As and In0. 52Al0. 48As M Kobayashi, PT Chen, Y Sun, N Goel, P Majhi, M Garner, W Tsai, ... Applied Physics Letters 93 (18), 2008 | 64 | 2008 |
