| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 114 | 2020 |
| A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019 | 104 | 2019 |
| Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 222902, 2019 | 102 | 2019 |
| Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ... physica status solidi (a) 217 (8), 1900840, 2020 | 97 | 2020 |
| Ultra-Low Power Flexible Precision FeFET Based Analog In-Memory Computing T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ... 2020 IEEE International Electron Devices Meeting (IEDM), 29.2. 1-29.2. 4, 2020 | 82 | 2020 |
| On the Origin of Wake‐Up and Antiferroelectric‐Like behavior in Ferroelectric Hafnium Oxide M Lederer, R Olivo, D Lehninger, S Abdulazhanov, T Kämpfe, S Kirbach, ... physica status solidi (RRL)–Rapid Research Letters, 2021 | 73 | 2021 |
| Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ... IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021 | 70 | 2021 |
| Structural and electrical comparison of Si and Zr doped hafnium oxide thin films and integrated FeFETs utilizing transmission kikuchi diffraction M Lederer, T Kämpfe, N Vogel, D Utess, B Volkmann, T Ali, R Olivo, ... Nanomaterials 10 (2), 384, 2020 | 56 | 2020 |
| Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films S Kirbach, M Lederer, S Eßlinger, C Mart, M Czernohorsky, W Weinreich, ... Applied Physics Letters 118 (1), 012904, 2021 | 45 | 2021 |
| Random and systematic variation in nanoscale Hf0. 5Zr0. 5O2 ferroelectric FinFETs: physical origin and neuromorphic circuit implications S De, MA Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology 3, 826232, 2022 | 42 | 2022 |
| Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 39 | 2020 |
| High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application J Okuno, T Kunihiro, K Konishi, H Maemura, Y Shuto, F Sugaya, ... 2021 IEEE International Memory Workshop (IMW), 1-3, 2021 | 37 | 2021 |
| READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications S De, F Müller, HH Le, M Lederer, Y Raffel, T Ali, D Lu, T Kämpfe IEEE Journal of the Electron Devices Society 10, 637-641, 2022 | 35 | 2022 |
| A Fully Integrated Ferroelectric Thin‐Film‐Transistor–Influence of Device Scaling on Threshold Voltage Compensation in Displays D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ... Advanced Electronic Materials, 2100082, 2021 | 35 | 2021 |
| Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide M Lederer, A Reck, K Mertens, R Olivo, P Bagul, A Kia, B Volkmann, ... Applied Physics Letters 118 (1), 012901, 2021 | 34 | 2021 |
| Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide M Lederer, P Bagul, D Lehninger, K Mertens, A Reck, R Olivo, T Kämpfe, ... ACS Applied Electronic Materials 3 (9), 4115-4120, 2021 | 32 | 2021 |
| 28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application S De, F Müller, S Thunder, S Abdulazhanov, N Laleni, M Lederer, T Ali, ... IEEE Transactions on Electron Devices 69 (12), 7194-7198, 2022 | 27 | 2022 |
| Electric field-induced crystallization of ferroelectric hafnium zirconium oxide M Lederer, S Abdulazhanov, R Olivo, D Lehninger, T Kämpfe, K Seidel, ... Scientific reports 11 (1), 22266, 2021 | 27 | 2021 |
| Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array S De, F Müller, N Laleni, M Lederer, Y Raffel, S Mojumder, A Vardar, ... IEEE Electron Device Letters 43 (12), 2081-2084, 2022 | 24 | 2022 |
| Current percolation path impacting switching behavior of ferroelectric FETs F Müller, M Lederer, R Olivo, T Ali, R Hoffmann, H Mulaosmanovic, ... 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 24 | 2021 |
Thomas KämpfeFraunhofer IPMS - Center Nanoelectronic TechnologiesVerified email at ipms.fraunhofer.de
