| Modeling of a SOFC fuelled by methane: From direct internal reforming to gradual internal reforming JM Klein, Y Bultel, S Georges, M Pons Chemical Engineering Science 62 (6), 1636-1649, 2007 | 193 | 2007 |
| Adsorptive machines with advanced cycles for heat pumping or cooling applications: Cycles á adsorption pour pompes á chaleur ou machines frigor: figues M Pons, F Poyelle International Journal of Refrigeration 22 (1), 27-37, 1999 | 163 | 1999 |
| Improvement of the wear resistance of 316L stainless steel by laser surface alloying C Tassin, F Laroudie, M Pons, L Lelait Surface and Coatings Technology 80 (1-2), 207-210, 1996 | 130 | 1996 |
| Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals M Pons, E Blanquet, JM Dedulle, I Garcon, R Madar, C Bernard Journal of the Electrochemical Society 143 (11), 3727, 1996 | 97 | 1996 |
| Carbide-reinforced coatings on AISI 316 L stainless steel by laser surface alloying C Tassin, F Laroudie, M Pons, L Lelait Surface and Coatings Technology 76, 450-455, 1995 | 85 | 1995 |
| State of the art in the modelling of SiC sublimation growth M Pons, M Anikin, K Chourou, JM Dedulle, R Madar, E Blanquet, A Pisch, ... Materials Science and Engineering: B 61, 18-28, 1999 | 77 | 1999 |
| Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept J Meziere, M Ucar, E Blanquet, M Pons, P Ferret, L Di Cioccio Journal of Crystal Growth 267 (3-4), 436-451, 2004 | 75 | 2004 |
| Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth F Mercier, JM Dedulle, D Chaussende, M Pons Journal of Crystal Growth 312 (2), 155-163, 2010 | 69 | 2010 |
| On the reference state for exergy when ambient temperature fluctuates P Michel International Journal of Thermodynamics 12 (3), 113-121, 2009 | 64 | 2009 |
| Growth and Doping Modeling of SiC‐CVD in a Horizontal Hot‐Wall Reactor S Nishizawa, M Pons Chemical vapor deposition 12 (8‐9), 516-522, 2006 | 63 | 2006 |
| Hardening of 316L stainless steel by laser surface alloying F Laroudie, C Tassin, M Pons Journal of materials science 30 (14), 3652-3657, 1995 | 60 | 1995 |
| SiC single crystal growth by a modified physical vapor transport technique P Wellmann, P Desperrier, R Müller, T Straubinger, A Winnacker, F Baillet, ... Journal of Crystal Growth 275 (1-2), e555-e560, 2005 | 59 | 2005 |
| Oxidation of ion-implanted metals A Galerie, M Caillet, M Pons Materials Science and Engineering 69 (2), 329-340, 1985 | 57 | 1985 |
| Control of the Supersaturation in the CF− PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications D Chaussende, M Ucar, L Auvray, F Baillet, M Pons, R Madar Crystal Growth & Design 5 (4), 1539-1544, 2005 | 56 | 2005 |
| Prospects for 3C-SiC bulk crystal growth D Chaussende, F Mercier, A Boulle, F Conchon, M Soueidan, G Ferro, ... Journal of Crystal Growth 310 (5), 976-981, 2008 | 55 | 2008 |
| Status of SiC bulk growth processes D Chaussende, PJ Wellmann, M Pons Journal of Physics D: Applied Physics 40 (20), 6150, 2007 | 53 | 2007 |
| Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization CE Ramberg, E Blanquet, M Pons, C Bernard, R Madar Microelectronic engineering 50 (1-4), 357-368, 2000 | 51 | 2000 |
| Continuous feed physical vapor transport: toward high purity and long boule growth of SiC D Chaussende, F Baillet, L Charpentier, E Pernot, M Pons, R Madar Journal of The Electrochemical Society 150 (10), G653, 2003 | 49 | 2003 |
| High-temperature oxidation resistance of chromium-based coatings deposited by DLI-MOCVD for enhanced protection of the inner surface of long tubes A Michau, F Maury, F Schuster, F Lomello, JC Brachet, E Rouesne, ... Surface and Coatings Technology 349, 1048-1057, 2018 | 48 | 2018 |
| Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M Balaji, A Claudel, V Fellmann, I Gélard, E Blanquet, R Boichot, A Pierret, ... Journal of Alloys and Compounds 526, 103-109, 2012 | 46 | 2012 |
Elisabeth BlanquetAdresse e-mail validée de simap.grenoble-inp.fr
