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James Spencer Lundh
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Thermal conductivity of aluminum scandium nitride for 5G mobile applications and beyond
Y Song, C Perez, G Esteves, JS Lundh, CB Saltonstall, TE Beechem, ...
ACS Applied Materials & Interfaces 13 (16), 19031-19041, 2021
652021
Thermal characterization of gallium nitride pin diodes
J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
582018
130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ...
Applied Physics Express 14 (7), 076502, 2021
522021
High-contrast and reversible polymer thermal regulator by structural phase transition
R Shrestha, Y Luan, S Shin, T Zhang, X Luo, JS Lundh, W Gong, ...
Science advances 5 (12), eaax3777, 2019
462019
Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors
B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ...
Applied Physics Letters 117 (15), 2020
422020
Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications
SK Oh, JS Lundh, S Shervin, B Chatterjee, DK Lee, S Choi, JS Kwak, ...
Journal of Electronic Packaging 141 (2), 020801, 2019
412019
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
JS Lundh, B Chatterjee, Y Song, AG Baca, RJ Kaplar, TE Beechem, ...
Applied Physics Letters 115 (15), 2019
392019
Polycrystalline diamond growth on β-Ga2O3 for thermal management
M Malakoutian, Y Song, C Yuan, C Ren, JS Lundh, RM Lavelle, JE Brown, ...
Applied Physics Express 14 (5), 055502, 2021
372021
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ...
Journal of Physics D: Applied Physics 56 (9), 093001, 2023
332023
A system to package perspective on transient thermal management of electronics
HP De Bock, D Huitink, P Shamberger, JS Lundh, S Choi, N Niedbalski, ...
Journal of Electronic Packaging 142 (4), 041111, 2020
302020
Electro-thermal reliability study of GaN high electron mobility transistors
B Chatterjee, JS Lundh, J Dallas, H Kim, S Choi
2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2017
262017
2d materials for universal thermal imaging of micro-and nanodevices: An application to gallium oxide electronics
JS Lundh, T Zhang, Y Zhang, Z Xia, M Wetherington, Y Lei, E Kahn, ...
ACS Applied Electronic Materials 2 (9), 2945-2953, 2020
232020
Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs
B Chatterjee, JS Lundh, Y Song, D Shoemaker, AG Baca, RJ Kaplar, ...
IEEE Electron Device Letters 41 (3), 461-464, 2020
222020
Effect of Ge doping on growth stress and conductivity in AlxGa1-xN
A Bansal, K Wang, JS Lundh, S Choi, JM Redwing
Applied Physics Letters 114 (14), 2019
202019
Device-level multidimensional thermal dynamics with implications for current and future wide bandgap electronics
JS Lundh, Y Song, B Chatterjee, AG Baca, RJ Kaplar, AM Armstrong, ...
Journal of Electronic Packaging 142 (3), 031113, 2020
172020
Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
W Wang, J Chen, JS Lundh, S Shervin, SK Oh, S Pouladi, Z Rao, JY Kim, ...
Applied Physics Letters 116 (12), 2020
132020
Thermal performance of diamond field-effect transistors
JS Lundh, D Shoemaker, AG Birdwell, JD Weil, LM De La Cruz, PB Shah, ...
Applied Physics Letters 119 (14), 2021
102021
Integrated temperature mapping of lateral gallium nitride electronics
JS Lundh, B Chatterjee, J Dallas, H Kim, S Choi
2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2017
102017
The doping dependence of the thermal conductivity of bulk gallium nitride substrates
Y Song, JS Lundh, W Wang, JH Leach, D Eichfeld, A Krishnan, C Perez, ...
Journal of Electronic Packaging 142 (4), 041112, 2020
92020
NiO/β-(AlxGa1− x) 2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage> 7 kV
HH Wan, JS Li, CC Chiang, X Xia, F Ren, HN Masten, JS Lundh, ...
Journal of Vacuum Science & Technology A 41 (3), 2023
82023
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Articles 1–20