| Comparative energy performance analysis of six primary photovoltaic technologies in madrid (Spain) T Adrada Guerra, J Amador Guerra, B Orfao Tabernero, ... energies 10 (6), 772, 2017 | 40 | 2017 |
| Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes B Orfao, BG Vasallo, D Moro-Melgar, S Perez, J Mateos, T Gonzalez IEEE Transactions on Electron Devices 67 (9), 3530-3535, 2020 | 10 | 2020 |
| Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples B Orfao, G Di Gioia, BG Vasallo, S Pérez, J Mateos, Y Roelens, ... Journal of Applied Physics 132 (4), 044502, 2022 | 5 | 2022 |
| Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes B Orfao, BG Vasallo, S Pérez, J Mateos, D Moro-Melgar, M Zaknoune, ... IEEE Transactions on Electron Devices 68 (9), 4296-4301, 2021 | 2 | 2021 |
| Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes B Orfao, M Abou Daher, RA Peña, BG Vasallo, S Pérez, ... Journal of Applied Physics 135 (1), 2024 | | 2024 |
| Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions T González, B Orfao, S Pérez, J Mateos, BG Vasallo Applied Physics Express 16 (2), 024003, 2023 | | 2023 |
| Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations B Orfao, BG Vasallo, D Moro-Melgar, M Zaknoune, G Di Gioia, ... 2021 13th Spanish Conference on Electron Devices (CDE), 94-97, 2021 | | 2021 |
| Modelling of Schottky-Barrier Diodes Operating under Strong Reverse-Bias Conditions B Orfao, BG Vasallo, S Pérez, J Mateos, T González | | |
Tomás GonzálezProfessor of Electronics - University of Salamanca (Spain)Verified email at usal.es
