Suivre
Zhesheng Chen
Zhesheng Chen
NJUST
Aucune adresse e-mail validée
Titre
Citée par
Citée par
Année
A high performance graphene/few-layer InSe photo-detector
Z Chen, J Biscaras, A Shukla
Nanoscale 7 (14), 5981-5986, 2015
1702015
Vanadium Doping Enhanced Electrochemical Performance of Molybdenum Oxide in Lithium‐Ion Batteries
G Qu, J Wang, G Liu, B Tian, C Su, Z Chen, JP Rueff, Z Wang
Advanced Functional Materials 29 (2), 1805227, 2019
832019
High Efficiency Dye-sensitized Solar Cells Constructed with Composites of TiO2 and the Hot-bubbling Synthesized Ultra-Small SnO2 Nanocrystals
X Mao, R Zhou, S Zhang, L Ding, L Wan, S Qin, Z Chen, J Xu, S Miao
Scientific reports 6 (1), 19390, 2016
792016
High quality 2D crystals made by anodic bonding: a general technique for layered materials
K Gacem, M Boukhicha, Z Chen, A Shukla
Nanotechnology 23 (50), 505709, 2012
692012
Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide
J Biscaras, Z Chen, A Paradisi, A Shukla
Nature communications 6 (1), 8826, 2015
672015
Enhanced sorption of radiocobalt from water by Bi (III) modified montmorillonite: a novel adsorbent
Z Guo, Y Li, S Zhang, H Niu, Z Chen, J Xu
Journal of hazardous materials 192 (1), 168-175, 2011
622011
Effect of environmental conditions on the sorption of radiocobalt from aqueous solution to treated eggshell as biosorbent
S Zhang, Z Guo, J Xu, H Niu, Z Chen, J Xu
Journal of Radioanalytical and Nuclear Chemistry 288 (1), 121-130, 2011
502011
Cu2ZnSnSe4 thin films prepared by selenization of co-electroplated Cu–Zn–Sn precursors
Z Chen, L Han, L Wan, C Zhang, H Niu, J Xu
Applied Surface Science 257 (20), 8490-8492, 2011
452011
Anodic bonded 2D semiconductors: from synthesis to device fabrication
Z Chen, K Gacem, M Boukhicha, J Biscaras, A Shukla
Nanotechnology 24 (41), 415708, 2013
392013
A high performance self-driven photodetector based on a graphene/InSe/MoS 2 vertical heterostructure
Z Chen, Z Zhang, J Biscaras, A Shukla
Journal of Materials Chemistry C 6 (45), 12407-12412, 2018
362018
Band gap renormalization, carrier multiplication, and Stark broadening in photoexcited black phosphorus
Z Chen, J Dong, E Papalazarou, M Marsi, C Giorgetti, Z Zhang, B Tian, ...
Nano letters 19 (1), 488-493, 2018
322018
Unraveling the Dirac fermion dynamics of the bulk-insulating topological system
E Papalazarou, L Khalil, M Caputo, L Perfetti, N Nilforoushan, H Deng, ...
Physical Review Materials 2 (10), 104202, 2018
292018
Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics
Z Chen, C Giorgetti, J Sjakste, R Cabouat, V Véniard, Z Zhang, ...
Physical Review B 97 (24), 241201, 2018
242018
Impact of environmental conditions on the sorption behavior of radiocobalt in TiO 2 /eggshell suspensions
S Zhang, H Niu, Z Guo, Z Chen, H Wang, J Xu
Journal of Radioanalytical and Nuclear Chemistry 289 (2), 479-487, 2011
202011
Photoinduced renormalization and electronic screening of quasi-two-dimensional Dirac states in
N Nilforoushan, M Casula, M Caputo, E Papalazarou, J Caillaux, Z Chen, ...
Physical Review Research 2 (4), 043397, 2020
182020
Optimal light harvesting in 2D semiconductor heterostructures
Z Chen, J Biscaras, A Shukla
2D Materials 4 (2), 025115, 2017
182017
Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe
Z Chen, J Sjakste, J Dong, A Taleb-Ibrahimi, JP Rueff, A Shukla, J Peretti, ...
Proceedings of the National Academy of Sciences 117 (36), 21962-21967, 2020
172020
Direct observation of band gap renormalization in layered indium selenide
Z Zhang, Z Chen, M Bouaziz, C Giorgetti, H Yi, J Avila, B Tian, A Shukla, ...
ACS nano 13 (11), 13486-13491, 2019
172019
Spectroscopy of buried states in black phosphorus with surface doping
Z Chen, J Dong, C Giorgetti, E Papalazarou, M Marsi, Z Zhang, B Tian, ...
2D Materials 7 (3), 035027, 2020
162020
Time-resolved photoemission spectroscopy of electronic cooling and localization in crystals
Z Chen, M Lee, Z Zhang, H Diab, D Garrot, F Lédée, P Fertey, ...
Physical Review Materials 1 (4), 045402, 2017
162017
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20