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Jason T. Dong
Jason T. Dong
PhD candidate in materials, UCSB
Verified email at ucsb.edu
Title
Cited by
Cited by
Year
Gate-tunable superconducting diode effect in a three-terminal Josephson device
M Gupta, GV Graziano, M Pendharkar, JT Dong, CP Dempsey, ...
Nature communications 14 (1), 3078, 2023
66*2023
Charge Separation in Epitaxial SnS/MoS2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD
JN Olding, A Henning, JT Dong, Q Zhou, MJ Moody, PJM Smeets, ...
ACS Applied Materials & Interfaces 11 (43), 40543-40550, 2019
222019
Selective control of conductance modes in multi-terminal Josephson junctions
GV Graziano, M Gupta, M Pendharkar, JT Dong, CP Dempsey, ...
Nature communications 13 (1), 5933, 2022
212022
Strain-Energy release in bent semiconductor nanowires occurring by polygonization or nanocrack formation
Z Sun, C Huang, J Guo, JT Dong, RF Klie, LJ Lauhon, DN Seidman
ACS nano 13 (3), 3730-3738, 2019
102019
Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
HS Inbar, DQ Ho, S Chatterjee, M Pendharkar, AN Engel, JT Dong, ...
Physical Review Materials 6 (12), L121201, 2022
82022
Large second-order Josephson effect in planar superconductor-semiconductor junctions
P Zhang, A Zarassi, L Jarjat, V Van de Sande, M Pendharkar, JS Lee, ...
SciPost Physics 16 (1), 030, 2024
52024
Iterative design of a high zT thermoelectric material
AH Adekoya, Y Zhang, M Peters, J Male, Y Chart, J Dong, R Franks, ...
Applied Physics Letters 119 (20), 2021
52021
Towards merged-element transmons using silicon fins: The FinMET
A Goswami, AP McFadden, T Zhao, H Inbar, JT Dong, R Zhao, ...
Applied Physics Letters 121 (6), 2022
42022
Electronic structure of InSb (001),(110), and (111) B surfaces
JT Dong, HS Inbar, M Pendharkar, TAJ van Schijndel, EC Young, ...
Journal of Vacuum Science & Technology B 41 (3), 2023
32023
Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect
P Zhang, S Mudi, M Pendharkar, JS Lee, CP Dempsey, AP McFadden, ...
arXiv preprint arXiv:2211.08710, 2022
32022
Planar josephson junctions templated by nanowire shadowing
P Zhang, A Zarassi, M Pendharkar, JS Lee, L Jarjat, V Van de Sande, ...
arXiv preprint arXiv:2211.04130, 2022
32022
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler
S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ...
Physical Review Materials 5 (12), 124207, 2021
32021
Erratum:“Electronic structure of InSb (001),(110), and (111) B surfaces”[J. Vac. Sci. Technol. B 41, 032808 (2023)]
JT Dong, HS Inbar, M Pendharkar, TAJ van Schijndel, EC Young, ...
Journal of Vacuum Science & Technology B 41 (5), 2023
12023
Inversion symmetry breaking in epitaxial ultrathin bi (111) films
HS Inbar, M Zubair, JT Dong, AN Engel, CP Dempsey, YH Chang, ...
arXiv preprint arXiv:2302.00803, 2023
12023
Molecular beam epitaxy growth of ferromagnetic MnSb on InGaSb: Characterization of orientation, interfaces, and magnetic properties
C Dempsey, J Dong, H Inbar, A Engel, A Goswami, YH Chang, ...
APS March Meeting Abstracts 2022, W12. 002, 2022
12022
Growth and characterization of -Sn thin films on In- and Sb-rich reconstructions of InSb(001)
AN Engel, CP Dempsey, HS Inbar, JT Dong, S Nishihaya, Y Chang, ...
Physical Review Materials 8 (4), 044202, 2024
2024
Enhanced mobility of ternary InGaAs quantum wells through digital alloying
JT Dong, Y Gul, AN Engel, TAJ van Schijndel, CP Dempsey, M Pepper, ...
arXiv preprint arXiv:2403.17166, 2024
2024
Strain Solitons in an Epitaxially Strained van der Waals-like Material
JT Dong, HS Inbar, CP Dempsey, AN Engel, CJ Palmstrøm
Nano Letters, 2024
2024
Localization and Spin-orbit coupling in InGaAs digital alloy quantum wells
J Dong, Y Gul, A Engel, C Dempsey, T van Schijndel, M Pepper, ...
Bulletin of the American Physical Society, 2024
2024
Low-Temperature MBE growth of superconducting Ta films on Silicon and Sapphire substrates
C Palmstrom, A Engel, T van Schijndel, J Dong, A McFadden, ...
Bulletin of the American Physical Society, 2024
2024
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