360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications JS Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, I Khalaf, ... IEEE Electron Device Letters 41 (8), 1173-1176, 2020 | 59 | 2020 |
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT JS Moon, B Grabar, J Wong, D Chuong, E Arkun, DV Morales, P Chen, ... IEEE Electron Device Letters 42 (6), 796-799, 2021 | 58 | 2021 |
High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency> 70% at 30 GHz JS Moon, R Grabar, J Wong, M Antcliffe, P Chen, E Arkun, I Khalaf, ... Electronics Letters 56 (13), 678-680, 2020 | 29 | 2020 |
W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz JS Moon, B Grabar, J Wong, C Dao, E Arkun, H Tai, D Fanning, NC Miller, ... IEEE Microwave and Wireless Technology Letters 33 (2), 161-164, 2022 | 24 | 2022 |
High-speed graded-channel GaN HEMTs with linearity and efficiency JS Moon, B Grabar, M Antcliffe, J Wong, C Dao, P Chen, E Arkun, I Khalaf, ... 2020 IEEE/MTT-S International Microwave Symposium (IMS), 573-575, 2020 | 14 | 2020 |
Graded-channel GaN-based HEMTs for high linearity amplifiers at millimeter-wave N Venkatesan, G Silva-Oelker, P Fay 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 9 | 2019 |
Ultra-linear and high-efficiency GaN technology for 5G and beyond J Moon, B Grabar, J Wong, C Dao, E Arkun, DV Morales, J Tai, D Fanning, ... 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2022 | 7 | 2022 |
IEEE MTT-S International Microwave Symposium JS Moon, B Grabar, M Antcliffe, J Wong, C Dao, P Chen, E Arkun, I Khalaf, ... IEEE, 2015 | 7 | 2015 |
Highly linear and efficient mm-Wave GaN HEMTs and MMICs J Moon, B Grabar, J Wong, J Tai, E Arkun, DV Morales, C Dao, ... 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 302-304, 2022 | 6 | 2022 |
Electric field engineering in graded-channel GaN-based HEMTs N Venkatesan, JS Moon, P Fay 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 6 | 2021 |
Ferroelectric-gated GaN HEMTs for RF and mm-wave switch applications H Ye, C Wu, N Venkatesan, J Wang, Y Cao, A Xie, E Beam, P Fay 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 4 | 2022 |
Modelling challenges for enabling high performance amplifiers in 5G/6G applications N Poluri, MM DeSouza, N Venkatesan, P Fay 2021 28th International Conference on Mixed Design of Integrated Circuits …, 2021 | 4 | 2021 |
RF performance of GaN-based graded-channel HEMTs N Venkatesan, J Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, ... 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020 | 4 | 2020 |
Electric field control and exploitation in III-N devices P Fay, Y Duan, Z Zhu, N Venkatesan Quantum Sensing and Nano Electronics and Photonics XX 12895, 79-83, 2024 | 1 | 2024 |
High-power density W-band MMIC amplifiers using graded-channel GaN HEMTs JS Moon, B Grabar, J Wong, J Tai, I Ramos, E Arkun, C Dao, D Fanning, ... 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 97-100, 2023 | 1 | 2023 |
Polarization-Engineering of III-N mm-Wave Transistors for High Efficiency and Linearity P Fay, N Venkatesan, JS Moon 2022 Device Research Conference (DRC), 1-2, 2022 | 1 | 2022 |
Polarization‐Graded High‐Electron‐Mobility Transistors for Improved Johnson's Figure of Merit N Venkatesan, G Silva‐Oelker, W Turner, JS Moon, P Fay physica status solidi (a), 2300923, 2024 | | 2024 |
Polarization Engineering in AlGaN/GaN High Electron Mobility Transistors for High Linearity, High-power RF Applications N Venkatesan University of Notre Dame, 2024 | | 2024 |
Polarization-Graded HEMTs for Improved Johnson’s Figure of Merit N Venkatesan, W Turner, J Moon, P Fay The 14th International Conference on Nitride Semiconductors (ICNS-14), 2023 | | 2023 |
Integration of ferroelectrics with III-N transistors for high performance millimeter-wave applications H Ye, YE Jeng, A Jonsson, C Wu, N Venkatesan, J Wang, Y Cao, JA Xie, ... Quantum Sensing and Nano Electronics and Photonics XIX 12430, 5-8, 2023 | | 2023 |