| Absorption edge characteristics of GaAs, GaSb, InAs, and InSb ST Schaefer, S Gao, PT Webster, RR Kosireddy, SR Johnson Journal of Applied Physics 127 (16), 165705, 2020 | 25 | 2020 |
| Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy PT Webster, AJ Shalindar, ST Schaefer, SR Johnson Applied Physics Letters 111 (8), 082104, 2017 | 21 | 2017 |
| Molecular beam epitaxy growth and optical properties of InAsSbBi ST Schaefer, RR Kosireddy, PT Webster, SR Johnson Journal of Applied Physics 126 (8), 083101, 2019 | 19 | 2019 |
| Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ... Journal of Applied Physics 129 (18), 184501, 2021 | 18 | 2021 |
| Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications TT McCarthy, Z Ju, S Schaefer, SQ Yu, YH Zhang Journal of Applied Physics 130 (22), 223102, 2021 | 8 | 2021 |
| Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy RR Kosireddy, ST Schaefer, AJ Shalindar, SR Johnson Journal of Applied Physics 126 (9), 095108, 2019 | 8 | 2019 |
| Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys ST Schaefer, MS Milosavljevic, RR Kosireddy, SR Johnson Journal of Applied Physics 129 (3), 035303, 2021 | 6 | 2021 |
| Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant PT Webster, ST Schaefer, EH Steenbergen, SR Johnson Quantum Sensing and Nano Electronics and Photonics XV 10540, 173-179, 2018 | 5 | 2018 |
| Examination of the structural quality of InAsSbBi epilayers using cross section transmission electron microscopy RR Kosireddy, ST Schaefer, AJ Shalindar, PT Webster, SR Johnson Microscopy and Microanalysis 24 (S1), 36-37, 2018 | 4 | 2018 |
| InAsBi Materials AJ Shalindar, PT Webster, ST Schaefer, SR Johnson Molecular Beam Epitaxy, 181-196, 2018 | 4 | 2018 |
| Temperature dependence of atomic ordering and composition modulation in InAsSbBi grown by molecular beam epitaxy on GaSb substrates RR Kosireddy, ST Schaefer, PT Webster, MS Milosavljevic, SR Johnson Journal of Alloys and Compounds 859, 157860, 2021 | 2 | 2021 |
| Enhanced second-order nonlinear susceptibility in asymmetric type-II quantum well Z Ju, S Schaefer, J Khurgin, YH Zhang Nonlinear Frequency Generation and Conversion: Materials and Devices XXII …, 2023 | 1 | 2023 |
| Molecular Beam Epitaxy Growth of CdSe for Si-based Tandem Cell Application S Schaefer, Z Ju, A McMinn, X Qi, YH Zhang 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 1288-1290, 2022 | 1 | 2022 |
| Structural and optical properties of InAsSbBi grown by molecular beam epitaxy on offcut GaSb substrates RR Kosireddy, ST Schaefer, MS Milosavljevic, SR Johnson Photonics 8 (6), 215, 2021 | 1 | 2021 |
| Rapid screening of molecular beam epitaxy conditions for monoclinic (In x Ga 1− x) 2 O 3 alloys S Schaefer, D Febba, K Egbo, G Teeter, A Zakutayev, B Tellekamp Journal of Materials Chemistry A 12 (9), 5508-5519, 2024 | | 2024 |
| Mg and Zn counterdoping of homoepitaxial β-Ga2O3 grown by molecular beam epitaxy S Schaefer, K Egbo, S Harvey, A Zakutayev, B Tellekamp 6th US Gallium Oxide Workshop, 12, 2023 | | 2023 |
| Contacts of solar cells and other optoelectronic devices YH Zhang, X Qi, JU Zheng, J Ding, T Mccarthy, S Schaefer US Patent App. 18/151,341, 2023 | | 2023 |
| Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emission DM Fébba, KR Talley, K Johnson, S Schaefer, SR Bauers, JS Mangum, ... APL Materials 11 (7), 2023 | | 2023 |
| Kinetic Model for Molecular Beam Epitaxy Growth of III-V Bismide Alloys ST Schaefer, MS Milosavljevic, RR Kosireddy, SR Johnson US Patent App. 17/552,524, 2022 | | 2022 |
| Fundamental Study of III-V Bismides for Space Applications SR Johnson, ST Schaefer, RR Kosireddy, MS Milosavljevic, ... | | 2022 |
