| Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ... Applied Physics Letters 101 (17), 172108, 2012 | 104 | 2012 |
| Anisotropy in the hole mobility measured along the and orientations in a strained Ge quantum well AHA Hassan, RJH Morris, OA Mironov, R Beanland, D Walker, S Huband, ... Applied Physics Letters 104 (13), 132108, 2014 | 25 | 2014 |
| Ultra high hole mobilities in a pure strained Ge quantum well OA Mironov, AHA Hassan, RJH Morris, A Dobbie, M Uhlarz, D Chrastina, ... Thin Solid Films 557, 329-333, 2014 | 19 | 2014 |
| New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100) Si as basis material for post‐Si CMOS technology OA Mironov, AHA Hassan, M Uhlarz, S Kiatgamolchai, A Dobbie, ... physica status solidi (c) 11 (1), 61-64, 2014 | 9 | 2014 |
| An origin behind Rashba spin splitting within inverted doped sGe heterostructures AHA Hassan, RJH Morris, OA Mironov, S Gabani, A Dobbie, DR Leadley Applied Physics Letters 110 (4), 042405, 2017 | 5 | 2017 |
| Ultra-high hall mobility (1 x 106 cm2v-1s-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure cvd A Dobbie, M Myronov, RJH Morris, MJ Prest, JS Richardson-Bullock, ... 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | 1 | 2012 |
| Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well AHA Hassan, OA Mironov, A Dobbie, JH Morris, JE Halpin, VA Shah, ... 2013 IEEE XXXIII International Scientific Conference Electronics and …, 2013 | | 2013 |
| Pure Ge quantum well with high hole mobility AHA Hassan, OA Mironov, A Feher, E Cizmar, S Gabani, RJH Morris, ... 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | | 2013 |
David LeadleyUniversity of WarwickVerified email at warwick.ac.uk
