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Abdollah Abbasi
Abdollah Abbasi
Other namesA Abbasi
Verified email at semnan.ac.ir - Homepage
Title
Cited by
Cited by
Year
Analysis and improvement of CIGS solar cell efficiency using multiple absorber substances simultaneously
SR Fatemi Shariat Panahi, A Abbasi, V Ghods, M Amirahmadi
Journal of Materials Science: Materials in Electronics 31, 11527-11537, 2020
272020
A simulation study of junctionless double-gate metal-oxide-semiconductor field-effect transistor with symmetrical side gates
M Bavir, A Abbasi, AA Orouji
Silicon 12, 1593-1602, 2020
242020
Improvement of CIGS solar cell efficiency with graded bandgap absorber layer
SRFS Panahi, A Abbasi, V Ghods, M Amirahmadi
Journal of Materials Science: Materials in Electronics 32, 2041-2050, 2021
202021
Modeling of GaAsxP1-x/CIGS tandem solar cells under stress conditions
I Gharibshahian, A Abbasi, AA Orouji
Superlattices and Microstructures 153, 106860, 2021
172021
Improvement of nanoscale SOI MOSFET heating effects by vertical Gaussian drain-source doping region
D Madadi, AA Orouji, A Abbasi
Silicon 13, 645-651, 2021
152021
Novel partially depleted SOI MOSFET for suppression floating-body effect: An embedded JFET structure
AA Orouji, A Abbasi
Superlattices and Microstructures 52 (3), 552-559, 2012
152012
A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs
A Abbasi, AA Orouji
Materials science in semiconductor processing 16 (6), 1821-1827, 2013
122013
Efficiency improvement of graphene/silicon Schottky junction solar cell using diffraction gratings
A Fattah, M Bavir, A Abbasi, AA Orouji
Optical and Quantum Electronics 52, 1-18, 2020
92020
A novel deep gate LDMOS structure using double P-trench to improve the breakdown voltage and the on-state resistance
A Gavoshani, AA Orouji, A Abbasi
Silicon 14 (2), 597-602, 2022
82022
Junctionless tunnel field-effect transistor with a modified auxiliary gate, a novel candidate for high-frequency applications
IC Cherik, A Abbasi, SK Maity, S Mohammadi
Micro and Nanostructures 174, 207477, 2023
72023
Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer
M Bolokian, AA Orouji, A Abbasi, D Madadi
physica status solidi (a) 219 (21), 2200214, 2022
72022
Band-pass and band-stop plasmonic filters based on Wilkinson power divider structure
N Korani, A Abbasi, M Danaie
Plasmonics, 1-10, 2023
52023
Enhanced performance of Graphene/AlGaAs/GaAs heterostructure Schottky solar cell using AlGaAs drainage
F Shahnooshi, AA Orouji, A Abbasi
Journal of Materials Science: Materials in Electronics 33 (7), 4617-4627, 2022
52022
Reducing the drain leakage current in a double-gate junctionless MOSFET using the electron screening effect
M Bavir, A Abbasi, AA Orouji
Journal of Electronic Materials 50, 2605-2617, 2021
42021
Improving the efficiency of CZTSSe thin-film solar cells using an optimized Al2O3 rear surface passivation layer
R Charghandeh, A Abbasi
Journal of Materials Science: Materials in Electronics 34 (5), 394, 2023
32023
Performance enhancement of asymmetrical double gate junctionless CMOS inverter with 3-nm critical feature size using charge sheet
M Bavir, A Abbasi, AA Orouji
IEEE Journal of the Electron Devices Society 10, 334-340, 2022
32022
Improvement the breakdown voltage and the ON-resistance in the LDMOSFET: Double buried metal layers structure
A Shokouhi Shoormasti, A Abbasi, AA Orouji
Silicon 13, 2157-2164, 2021
32021
Using energy band engineering to improve heterojunction solar cells efficiency
AS Shoormasti, A Abbasi, AA Orouji
Optik 218, 165243, 2020
32020
Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well
RN Bayat, A Abbasi, AA Orouji
Optical and Quantum Electronics 56 (1), 37, 2024
22024
Pyramid P+ area in SOI junction-less MOSFET for logic applications: DC investigation
M Bolokian, AA Orouji, A Abbasi, M Houshmand
Applied Nanoscience 13 (8), 5711-5717, 2023
22023
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Articles 1–20