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Abdollah Abbasi
Abdollah Abbasi
Other namesA Abbasi
Verified email at semnan.ac.ir - Homepage
Title
Cited by
Cited by
Year
Analysis and improvement of CIGS solar cell efficiency using multiple absorber substances simultaneously
SR Fatemi Shariat Panahi, A Abbasi, V Ghods, M Amirahmadi
Journal of Materials Science: Materials in Electronics 31, 11527-11537, 2020
272020
A simulation study of junctionless double-gate metal-oxide-semiconductor field-effect transistor with symmetrical side gates
M Bavir, A Abbasi, AA Orouji
Silicon 12, 1593-1602, 2020
242020
Improvement of CIGS solar cell efficiency with graded bandgap absorber layer
SRFS Panahi, A Abbasi, V Ghods, M Amirahmadi
Journal of Materials Science: Materials in Electronics 32, 2041-2050, 2021
202021
Modeling of GaAsxP1-x/CIGS tandem solar cells under stress conditions
I Gharibshahian, A Abbasi, AA Orouji
Superlattices and Microstructures 153, 106860, 2021
172021
Improvement of nanoscale SOI MOSFET heating effects by vertical Gaussian drain-source doping region
D Madadi, AA Orouji, A Abbasi
Silicon 13, 645-651, 2021
152021
Novel partially depleted SOI MOSFET for suppression floating-body effect: An embedded JFET structure
AA Orouji, A Abbasi
Superlattices and Microstructures 52 (3), 552-559, 2012
152012
A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs
A Abbasi, AA Orouji
Materials science in semiconductor processing 16 (6), 1821-1827, 2013
122013
Efficiency improvement of graphene/silicon Schottky junction solar cell using diffraction gratings
A Fattah, M Bavir, A Abbasi, AA Orouji
Optical and Quantum Electronics 52, 1-18, 2020
92020
A novel deep gate LDMOS structure using double P-trench to improve the breakdown voltage and the on-state resistance
A Gavoshani, AA Orouji, A Abbasi
Silicon 14 (2), 597-602, 2022
82022
Junctionless tunnel field-effect transistor with a modified auxiliary gate, a novel candidate for high-frequency applications
IC Cherik, A Abbasi, SK Maity, S Mohammadi
Micro and Nanostructures 174, 207477, 2023
72023
Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer
M Bolokian, AA Orouji, A Abbasi, D Madadi
physica status solidi (a) 219 (21), 2200214, 2022
72022
Band-pass and band-stop plasmonic filters based on Wilkinson power divider structure
N Korani, A Abbasi, M Danaie
Plasmonics, 1-10, 2023
62023
Enhanced performance of Graphene/AlGaAs/GaAs heterostructure Schottky solar cell using AlGaAs drainage
F Shahnooshi, AA Orouji, A Abbasi
Journal of Materials Science: Materials in Electronics 33 (7), 4617-4627, 2022
52022
Reducing the drain leakage current in a double-gate junctionless MOSFET using the electron screening effect
M Bavir, A Abbasi, AA Orouji
Journal of Electronic Materials 50, 2605-2617, 2021
42021
Improving the efficiency of CZTSSe thin-film solar cells using an optimized Al2O3 rear surface passivation layer
R Charghandeh, A Abbasi
Journal of Materials Science: Materials in Electronics 34 (5), 394, 2023
32023
Performance enhancement of asymmetrical double gate junctionless CMOS inverter with 3-nm critical feature size using charge sheet
M Bavir, A Abbasi, AA Orouji
IEEE Journal of the Electron Devices Society 10, 334-340, 2022
32022
Improvement the breakdown voltage and the ON-resistance in the LDMOSFET: Double buried metal layers structure
A Shokouhi Shoormasti, A Abbasi, AA Orouji
Silicon 13, 2157-2164, 2021
32021
Using energy band engineering to improve heterojunction solar cells efficiency
AS Shoormasti, A Abbasi, AA Orouji
Optik 218, 165243, 2020
32020
Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well
RN Bayat, A Abbasi, AA Orouji
Optical and Quantum Electronics 56 (1), 37, 2024
22024
Effect of In (O, S) buffer layer on the band alignment and the performance of CZT (S, Se) thin film solar cells
R Charghandeh, A Abbasi
Materials Today Communications 37, 107299, 2023
22023
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Articles 1–20