Takip et
Şadan Özden
Şadan Özden
mu.edu.tr üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Room-temperature interface state analysis of Au/Poly (4-vinyl phenol)/p-Si structure
N Kavasoglu, C Tozlu, O Pakma, AS Kavasoglu, S Ozden, B Metin, O Birgi, ...
Synthetic metals 159 (17-18), 1880-1884, 2009
382009
I–V–T analysing an inhomogeneous Au/Poly (4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights
O Pakma, C Tozlu, N Kavasoglu, AS Kavasoglu, S Ozden
Journal of sol-gel science and technology 58 (1), 244-250, 2011
202011
A comparison of the effect of CdCl2 and MgCl2 processing on the transport properties of n-CdS/p-CdTe solar cells and a simple approach to determine their back contact barrier …
H Bayhan, Ş Özden, JD Major, M Bayhan, ET Dağdeviren, K Durose
Solar Energy 140, 66-72, 2016
182016
Optical properties of selenium sulfide thin film produced via chemical dropping method
İ Afşin Kariper, Ş Özden, FM Tezel
Optical and Quantum Electronics 50, 1-7, 2018
172018
Forward and reverse current–voltage–temperature characteristics of a typical BPW34 photodiode
H Bayhan, Ş Özden
Solid-state electronics 50 (9-10), 1563-1566, 2006
162006
Synthesis and characterization of vanadium oxide thin films on different substrates
O Pakma, C Özaydın, Ş Özden, IA Kariper, Ö Güllü
Journal of Materials Science: Materials in Electronics 28, 10909-10913, 2017
142017
Investigation of temperature dependent dc current transport mechanism on Au/poly (4-vinyl phenol)/p-Si device
AS Kavasoglu, C Tozlu, O Pakma, N Kavasoglu, S Ozden, B Metin, O Birgi, ...
Journal of Physics D: Applied Physics 42 (14), 145111, 2009
112009
Temperature dependent electrical transport in Al/Poly (4-vinyl phenol)/p-GaAs metal-oxide-semiconductor by sol-gel spin coating method
Ş Özden, C Tozlu, O Pakma
International Journal of Photoenergy 2016, 2016
92016
Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device
Ş Özden, N Avcı, O Pakma, İA Kariper
Journal of Materials Science: Materials in Electronics 33 (16), 12796-12807, 2022
82022
Frequency dependence of junction capacitance of BPW34 and BPW41 pin photodiodes
H Bayhan, Ş Özden
Pramana 68, 701-706, 2007
82007
Temperature dependent current transport mechanism of photopolymer based Al/NOA60/p-Si MPS device
Ş Özden, N Avcı, O Pakma, İA Kariper
Journal of Inorganic and Organometallic Polymers and Materials 32 (5), 1810-1818, 2022
72022
Photovoltaic applications at Mugla University
R Eke, S Ozden, A Senturk, S Oktik
The first Turkish Solar Energy Conference and Exhibition-SolarTR-1, Ankara …, 2010
72010
The largest double-axis sun tracking PV systems with electronic control and photosensors in Turkey
R Eke, S Ozden, A Senturk, O Fleck, S Oktik
25th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC …, 2010
72010
Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures
H Bayhan, S Ozden
Semiconductors 41, 353-356, 2007
72007
NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device
Ş Özden, N Avcı, O Pakma, A Kariper
Journal of Materials Science: Materials in Electronics 32 (23), 27688-27697, 2021
62021
Origins of reverse bias currents in a typical BPW34 photodiode
H Bayhan, Ş Özden
Turkish Journal of Physics 29 (6), 371-378, 2005
62005
Physical investigations of vanadium oxide thin films on p-Si substrate
Y Bilgen, O Pakma, IA Kariper, S Ozden
Journal of Materials Science: Materials in Electronics 33 (20), 16263-16271, 2022
52022
Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices
Ş Özden, Ö Güllü, O Pakma
The European Physical Journal Applied Physics 82 (2), 20101, 2018
52018
Improvement effect of the MoO3 interface layer on the p-Si-based Schottky diode
Ş Özden
Journal of Materials Science: Materials in Electronics 32 (7), 9567-9573, 2021
42021
Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages
S Özden, H Bayhan, A Dönmez, M Bayhan
Semiconductors 42, 834-837, 2008
42008
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