| Two-dimensional electric-double-layer Esaki diode P Paletti, R Yue, C Hinkle, SK Fullerton-Shirey, A Seabaugh npj 2D Materials and Applications 3 (1), 19, 2019 | 33 | 2019 |
| Enhanced carrier transport by transition metal doping in WS 2 field effect transistors M Liu, S Wei, S Shahi, HN Jaiswal, P Paletti, S Fathipour, M Remškar, ... Nanoscale 12 (33), 17253-17264, 2020 | 24 | 2020 |
| Steep slope transistors: Tunnel FETs and beyond A Seabaugh, C Alessandri, MA Heidarlou, HM Li, L Liu, H Lu, S Fathipour, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 349-351, 2016 | 24 | 2016 |
| Tunnel FET analog benchmarking and circuit design H Lu, P Paletti, W Li, P Fay, T Ytterdal, A Seabaugh IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018 | 17 | 2018 |
| Can graphene outperform indium tin oxide as transparent electrode in organic solar cells? P Paletti, R Pawar, G Ulisse, F Brunetti, G Iannaccone, G Fiori 2D Materials 2 (4), 045006, 2015 | 10 | 2015 |
| Demonstration of electric double layer p-i-n junction in WSe2 S Fathipour, P Paletti, S Fullerton-Shirey, A Seabaugh 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 8 | 2016 |
| Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition MA Heidarlou, P Paletti, B Jariwala, JA Robinson, SK Fullerton-Shirey, ... IEEE Transactions on Electron Devices 67 (4), 1839-1844, 2020 | 6 | 2020 |
| Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation P Paletti, S Fathipour, M Remškar, A Seabaugh Journal of Applied Physics 127 (6), 2020 | 5 | 2020 |
| Investigation of InAs/GaSb tunnel diodes on SOI C Convertino, D Cutaia, H Schmid, N Bologna, P Paletti, AM Ionescu, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 5 | 2017 |
| Electric-double-layer p–i–n junctions in WSe2 S Fathipour, P Paletti, SK Fullerton-Shirey, AC Seabaugh Scientific Reports 10 (1), 12890, 2020 | 4 | 2020 |
| Scalable High-Mobility Graphene/hBN Heterostructures L Martini, V Mišeikis, D Esteban, J Azpeitia, S Pezzini, P Paletti, ... ACS Applied Materials & Interfaces 15 (31), 37794-37801, 2023 | 3 | 2023 |
| Steep subthreshold swing originating from gate delay P Paletti, MA Heidarlou, KG Serrano, C Alessandri, A Seabaugh 2019 Device Research Conference (DRC), 53-54, 2019 | 3 | 2019 |
| Electric double layer Esaki tunnel junction in a 40-nm-length, WSe2 channel grown by molecular beam epitaxy on Al203 P Paletti, A Seabaugh, R Yue, C Hinkle 2018 48th European Solid-State Device Research Conference (ESSDERC), 110-113, 2018 | 3 | 2018 |
| First synthesized WS2nanotube and nanoribbon field effect transistors grown by chemical vapor transport S Fathipour, H Li, P Paletti, M Remskar, S Fullerton-Shirey, A Seabaugh 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 2 | 2017 |
| Dynamics of ferroelectric and ionic memories: physics and applications A Seabaugh, P Paletti, A Palit, K González-Serrano, P Pandey 2019 IEEE 13th International Conference on ASIC (ASICON), 1-4, 2019 | 1 | 2019 |
| Tunnel Field-Effect Transistors: Device Models and Experiments on Two-Dimensional Semiconductors, including Demonstration of Electric-Double-Layer Esaki Junctions P Paletti University of Notre Dame, 2019 | 1 | 2019 |
| Ionic liquid gating of CVD-growth WS2-based field effect transistors L Martini, V Demontis, D Prete, D Convertino, S Pace, P Paletti, C Coletti, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 243-243, 2023 | | 2023 |
| Heterojunction Tunnel Field-Effect Transistors P Paletti, A Seabaugh Springer Handbook of Semiconductor Devices, 867-903, 2022 | | 2022 |
| Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate MA Heidarlou, B Jariwala, P Paletti, S Rouvimov, JA Robinsorr, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | | 2018 |
| Improving the efficiency of organic solar cells with graphene transparent electrode and light management: a simulation study G Fiori, P Paletti, R Pawar, G Iannaccone, G Ulisse, F Brunetti 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 1457-1460, 2015 | | 2015 |
Alan SeabaughProfessor of Electrical Engineering, University of Notre DameEmail verificata su nd.edu
