| High-electron-mobility AlGaN∕ AlN∕ GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy M Miyoshi, H Ishikawa, T Egawa, K Asai, M Mouri, T Shibata, M Tanaka, ... Applied Physics Letters 85 (10), 1710-1712, 2004 | 120 | 2004 |
| Metalorganic chemical vapor deposition and material characterization of lattice-matched InAlN/GaN two-dimensional electron gas heterostructures M Miyoshi, Y Kuraoka, M Tanaka, T Egawa Applied physics express 1 (8), 081102, 2008 | 55 | 2008 |
| Structural characterization of strained AlGaN layers in different Al content AlGaN∕ GaN heterostructures and its effect on two-dimensional electron transport properties M Miyoshi, T Egawa, H Ishikawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 52 | 2005 |
| Suppression of the subband parasitic peak by 1nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes JC Zhang, YH Zhu, T Egawa, S Sumiya, M Miyoshi, M Tanaka Applied Physics Letters 93 (13), 2008 | 51 | 2008 |
| Thermoelectric conversion module having channels filled with semiconducting material and insulating fillers Y Imanishi, M Miyoshi, T Watanabe, K Kushibiki, K Shinohara, ... US Patent 5,952,728, 1999 | 51 | 1999 |
| AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates S Sumiya, Y Zhu, J Zhang, K Kosaka, M Miyoshi, T Shibata, M Tanaka, ... Japanese Journal of Applied Physics 47 (1R), 43, 2008 | 49 | 2008 |
| Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN∕ AlN∕ GaN heterostructures grown on epitaxial AlN/sapphire templates M Miyoshi, T Egawa, H Ishikawa, KI Asai, T Shibata, M Tanaka, O Oda Journal of applied physics 98 (6), 2005 | 47 | 2005 |
| Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films K Banno, M Mizuno, K Fujita, T Kubo, M Miyoshi, T Egawa, T Soga Applied Physics Letters 103 (8), 2013 | 44 | 2013 |
| Semiconductor multilayer structure, semiconductor device and HEMT device M Miyoshi US Patent 7,199,408, 2007 | 44 | 2007 |
| DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AlN/sapphire templates M Miyoshi, A Imanishi, T Egawa, H Ishikawa, K Asai, T Shibata, M Tanaka, ... Japanese journal of applied physics 44 (9R), 6490, 2005 | 41 | 2005 |
| Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer M Miyoshi, T Egawa, H Ishikawa Solid-state electronics 50 (9-10), 1515-1521, 2006 | 39 | 2006 |
| Thermoelectric conversion module and method of manufacturing the same Y Imanishi, M Miyoshi, T Watanabe, K Kushibiki, K Shinohara, ... US Patent 5,994,637, 1999 | 38 | 1999 |
| Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition M Miyoshi, M Yamanaka, T Egawa, T Takeuchi Journal of Crystal Growth 506, 40-44, 2019 | 36 | 2019 |
| Thermoelectric conversion module and method of manufacturing the same Y Imanishi, M Miyoshi, T Watanabe, K Kushibiki, K Shinohara, ... US Patent 6,005,182, 1999 | 34 | 1999 |
| Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor … M Miyoshi, M Sakai, S Arulkumaran, H Ishikawa, T Egawa, M Tanaka, ... Japanese journal of applied physics 43 (12R), 7939, 2004 | 33 | 2004 |
| Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes JC Zhang, YH Zhu, T Egawa, S Sumiya, M Miyoshi, M Tanaka Applied Physics Letters 92 (19), 2008 | 32 | 2008 |
| Thermoelectric conversion module and method of manufacturing the same Y Imanishi, M Miyoshi, T Watanabe, K Kushibiki, K Shinohara, ... US Patent 6,306,673, 2001 | 31 | 2001 |
| Elastic Properties of Obsidian, Vitreous SiO2, and Vitreous GeO2 under High Pressure up to 6 GPa K Suito, M Miyoshi, T Sasakurau, H Fujisawa High‐pressure research: Application to Earth and planetary sciences 67, 219-225, 1992 | 31 | 1992 |
| MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates M Miyoshi, M Sakai, H Ishikawa, T Egawa, T Jimbo, M Tanaka, O Oda Journal of crystal growth 272 (1-4), 293-299, 2004 | 29 | 2004 |
| Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate S Arulkumaran, M Miyoshi, T Egawa, H Ishikawa, T Jimbo IEEE Electron Device Letters 24 (8), 497-499, 2003 | 29 | 2003 |
Tomohiko ShibataDOWA Electronics MaterialsVerified email at dowa.co.jp
