| CsPbBr3 Quantum Dots 2.0: Benzenesulfonic Acid Equivalent Ligand Awakens Complete Purification D Yang, X Li, W Zhou, S Zhang, C Meng, Y Wu, Y Wang, H Zeng Advanced Materials 31 (30), 1900767, 2019 | 367 | 2019 |
| Antimonene oxides: emerging tunable direct bandgap semiconductor and novel topological insulator S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng Nano letters 17 (6), 3434-3440, 2017 | 282 | 2017 |
| Ultrathin bismuth nanosheets for stable Na-ion batteries: clarification of structure and phase transition by in situ observation Y Huang, C Zhu, S Zhang, X Hu, K Zhang, W Zhou, S Guo, F Xu, H Zeng Nano Letters 19 (2), 1118-1123, 2019 | 132 | 2019 |
| Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications Z Hu, Y Ding, X Hu, W Zhou, X Yu, S Zhang Nanotechnology 30 (25), 252001, 2019 | 123 | 2019 |
| Two-dimensional GeS with tunable electronic properties via external electric field and strain S Zhang, N Wang, S Liu, S Huang, W Zhou, B Cai, M Xie, Q Yang, X Chen, ... Nanotechnology 27 (27), 274001, 2016 | 116 | 2016 |
| Two-dimensional SiP: an unexplored direct band-gap semiconductor S Zhang, S Guo, Y Huang, Z Zhu, B Cai, M Xie, W Zhou, H Zeng 2D Materials 4 (1), 015030, 2016 | 95 | 2016 |
| Modulating epitaxial atomic structure of antimonene through interface design T Niu, W Zhou, D Zhou, X Hu, S Zhang, K Zhang, M Zhou, H Fuchs, ... Advanced Materials 31 (29), 1902606, 2019 | 88 | 2019 |
| Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional W Zhou, S Zhang, S Guo, Y Wang, J Lu, X Ming, Z Li, H Qu, H Zeng Physical Review Applied 13 (4), 044066, 2020 | 80 | 2020 |
| Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy S Guo, Z Zhu, X Hu, W Zhou, X Song, S Zhang, K Zhang, H Zeng Nanoscale 10 (18), 8397-8403, 2018 | 73 | 2018 |
| Anisotropic in‐plane ballistic transport in monolayer black arsenic‐phosphorus fets W Zhou, S Zhang, Y Wang, S Guo, H Qu, P Bai, Z Li, H Zeng Advanced Electronic Materials 6 (3), 1901281, 2020 | 72 | 2020 |
| A class of Pb-free double perovskite halide semiconductors with intrinsic ferromagnetism, large spin splitting and high Curie temperature B Cai, X Chen, M Xie, S Zhang, X Liu, J Yang, W Zhou, S Guo, H Zeng Materials Horizons 5 (5), 961-968, 2018 | 63 | 2018 |
| First-principles study of SO2 sensors based on phosphorene and its isoelectronic counterparts: GeS, GeSe, SnS, SnSe S Guo, L Yuan, X Liu, W Zhou, X Song, S Zhang Chemical Physics Letters 686, 83-87, 2017 | 56 | 2017 |
| A highly sensitive and selective SnS2 monolayer sensor in detecting SF6 decomposition gas S Guo, X Hu, Y Huang, W Zhou, H Qu, L Xu, X Song, S Zhang, H Zeng Applied Surface Science 541, 148494, 2021 | 45 | 2021 |
| Two-dimensional pnictogen for field-effect transistors W Zhou, J Chen, P Bai, S Guo, S Zhang, X Song, L Tao, H Zeng Research, 2019 | 42 | 2019 |
| Mechanistic understanding of two-dimensional phosphorus, arsenic, and antimony high-capacity anodes for fast-charging lithium/sodium ion batteries S Guo, X Hu, W Zhou, X Liu, Y Gao, S Zhang, K Zhang, Z Zhu, H Zeng The Journal of Physical Chemistry C 122 (51), 29559-29566, 2018 | 40 | 2018 |
| DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl W Zhou, S Guo, S Zhang, Z Zhu, X Song, T Niu, K Zhang, X Liu, Y Zou, ... Nanoscale 10 (7), 3350-3355, 2018 | 40 | 2018 |
| Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport H Qu, S Guo, W Zhou, S Zhang IEEE Electron Device Letters 42 (1), 66-69, 2020 | 36 | 2020 |
| Layer-controlled band alignment, work function and optical properties of few-layer GeSe X Song, W Zhou, X Liu, Y Gu, S Zhang Physica B: Condensed Matter 519, 90-94, 2017 | 29 | 2017 |
| Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3 J Li, W Zhou, L Xu, J Yang, H Qu, T Guo, B Xu, S Zhang, H Zeng Materials Today Physics 26, 100749, 2022 | 24 | 2022 |
| Dipole-Engineering Strategy for Regulating the Electronic Contact of a Two-Dimensional X/Graphene (X = , , ) van der Waals Interface J Li, W Liu, W Zhou, J Yang, H Qu, Y Hu, S Zhang Physical Review Applied 17 (5), 054009, 2022 | 24 | 2022 |
