Michael D. Williams

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Nathan NewmanArizona State Univ., Stanford Univ., Conductus, Univ. of California Berkeley, Northwestern Univ.Verified email at asu.edu
Carl E. McCantsSpecial Assistant, DARPAVerified email at darpa.mil
Alan LuntzSLACVerified email at slac.stanford.edu
Keith GoossenUniversity of DelawareVerified email at udel.edu
Donald S. BethuneRetired Research Staff Member, IBM ResearchVerified email at us.ibm.com
Ken ChinProfessor of Physics, New Jersey Institute of TechnologyVerified email at njit.edu
Mark van SchilfgaardeProfessor of Physics, King's College LondonVerified email at kcl.ac.uk
Xiao-Qian WangProfessor of Physics, Clark Atlanta UniversityVerified email at cau.edu
Jun NogamiUniversity of TorontoVerified email at utoronto.ca
Seth MarderUniversity of Colorado-Boulder and National Renewable Energy LaboratoryVerified email at colorado.edu
Sergio A. PaniaguaNational Nanotechnology Laboratory; Universidad de Costa RicaVerified email at cenat.ac.cr
A. G. Unil PereraRegent's Professor of Physics, Georgia State UniversityVerified email at gsu.edu
Ting-Yi ChangVerified email at cc.ncue.edu.tw
Faisal AlamgirGeorgia Institute of TechnologyVerified email at mse.gatech.edu
Tod Sizer, Theodore Sizer, Theodore...Vice President, Optical Network and Devices Research, Nokia Bell LabsVerified email at thesizerfamily.org
Barbara BairdProfessor of Chemistry, Cornell UniversityVerified email at cornell.edu
Duminda K SamarakoonPh.D. In Chemistry, Research Associate at Clark Atlanta University, Visiting Scientist at CornellVerified email at cornell.edu
Darkeyah ReuvenVerified email at emory.edu
Dan KilperTrinity College DublinVerified email at tcd.ie
Walter HendersonResearch Scientist, Georgia Institute of TechnologyVerified email at gatech.edu

Michael D. Williams

Professor/Director, Clark Atlanta University

Verified email at cau.edu - Homepage

surface physics photoemission spectroscopy III-V semiconductors interface physics 2D materials


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The sticking of O2 on a Pt (111) surface AC Luntz, MD Williams, DS Bethune The Journal of Chemical Physics 89, 4381, 1988	300	1988
Molecular beam studies of H2 and D2 dissociative chemisorption on Pt (111) AC Luntz, JK Brown, MD Williams The Journal of chemical physics 93 (7), 5240-5246, 1990	191	1990
Electrical study of Schottky barriers on atomically clean GaAs (110) surfaces N Newman, M Van Schilfgaarde, T Kendelwicz, MD Williams, WE Spicer Physical Review B 33 (2), 1146, 1986	191	1986
Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs JE Cunningham, KW Goossen, MD Williams, WY Jan Applied Physics Letters 60 (6), 727-729, 1992	64	1992
Laser IR polarization spectroscopy at surfaces DS Bethune, MD Williams, AC Luntz The Journal of Chemical Physics 88, 3322, 1988	46	1988
Fermi level pinning during oxidation of atomically clean n‐InP(110) KA Bertness, T Kendelewicz, RS List, MD Williams, I Lindau, WE Spicer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986	45	1986
Experimental results examining various models of Schottky barrier formation on GaAs WE Spicer, N Newman, T Kendelewicz, WG Petro, MD Williams, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985	45	1985
Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers N Newman, KK Chin, WG Petro, T Kendelewicz, MD Williams, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985	43	1985
Photoelectron spectroscopy studies of plasma-fluorinated epitaxial graphene SD Sherpa, SA Paniagua, G Levitin, SR Marder, MD Williams, DW Hess Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2012	42	2012
Coexistence of precursor and direct dynamics: The sticking of O2 on a Pt (111) surface MD Williams, DS Bethune, AC Luntz The Journal of chemical physics 88 (4), 2843-2845, 1988	42	1988
Polarimetry of specular and non-multiple-scattered electromagnetic radiation from selectively roughened Si surfaces MD Williams, DE Aspnes Physical Review Letters 41 (24), 1667, 1978	34	1978
Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface T Kendelewicz, WG Petro, SH Pan, MD Williams, I Lindau, WE Spicer Applied physics letters 44 (1), 113-115, 1984	30	1984
Interfacial chemistry and Schottky-barrier formation of the Ni/InP (110) and Ni/GaAs (110) interfaces T Kendelewicz, MD Williams, WG Petro, I Lindau, WE Spicer Physical Review B 32 (6), 3758, 1985	25	1985
Dimerization induced incorporation nonlinearities in GaAsP JE Cunningham, MB Santos, KW Goossen, MD Williams, W Jan Applied Physics Letters 64 (18), 2418-2420, 1994	24	1994
Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP (110) T Kendelewicz, MD Williams, WG Petro, I Lindau, WE Spicer Physical Review B 31 (10), 6503, 1985	23	1985
Tunable Bands in Biased Multilayer Epitaxial Graphene MD Williams, DK Samarakoon, DW Hess, XQ Wang Nanoscale 4, 2962-2967, 2012	22	2012
Measured transition from two-dimensional to three-dimensional electroabsorption as quantum-well barriers are lowered KW Goossen, JE Cunningham, MD Williams, FG Storz, WY Jan Physical Review B 45 (23), 13773, 1992	22	1992
Chemical and electrical properties at the annealed Ti/GaAs (110) interface CE McCants, T Kendelewicz, PH Mahowald, KA Bertness, MD Williams, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3 …, 1988	22	1988
Chemical reaction and anion trapping at the Yb/GaAs (110) interface J Nogami, MD Williams, T Kendelewicz, I Lindau, WE Spicer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986	21	1986
Self-Assembly of Biofunctional Polymer on Graphene Nanoribbons DG Reuven, K Suggs, MD Williams, XQ Wang ACS Nano 6 (2), 1011-1017, 2012	19	2012

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