| Vertically integrated multiple nanowire field effect transistor BH Lee, MH Kang, DC Ahn, JY Park, T Bang, SB Jeon, J Hur, D Lee, ... Nano Letters 15 (12), 8056-8061, 2015 | 70 | 2015 |
| Functional circuitry on commercial fabric via textile-compatible nanoscale film coating process for fibertronics H Bae, BC Jang, H Park, SH Jung, HM Lee, JY Park, SB Jeon, G Son, ... Nano Letters 17 (10), 6443-6452, 2017 | 69 | 2017 |
| Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection JY Park, DI Moon, ML Seol, CK Kim, CH Jeon, H Bae, T Bang, YK Choi IEEE Transactions on Electron Devices 63 (3), 910-915, 2016 | 40 | 2016 |
| A Recoverable Synapse Device Using a Three‐Dimensional Silicon Transistor J Hur, BC Jang, J Park, DI Moon, H Bae, JY Park, GH Kim, SB Jeon, ... Advanced Functional Materials 28 (47), 1804844, 2018 | 37 | 2018 |
| Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ... ACS nano 11 (12), 12547-12552, 2017 | 37 | 2017 |
| Physically transient memory on a rapidly dissoluble paper for security application H Bae, BH Lee, D Lee, ML Seol, D Kim, JW Han, CK Kim, SB Jeon, D Ahn, ... Scientific Reports 6 (1), 38324, 2016 | 36 | 2016 |
| Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels JY Park, BH Lee, KS Chang, DU Kim, C Jeong, CK Kim, H Bae, YK Choi IEEE Transactions on Electron Devices 64 (11), 4393-4399, 2017 | 34 | 2017 |
| Nanoscale FET-based transduction toward sensitive extended-gate biosensors J Kwon, BH Lee, SY Kim, JY Park, H Bae, YK Choi, JH Ahn ACS sensors 4 (6), 1724-1729, 2019 | 33 | 2019 |
| Sustainable electronics for nano-spacecraft in deep space missions DI Moon, JY Park, JW Han, GJ Jeon, JY Kim, J Moon, ML Seol, CK Kim, ... 2016 IEEE International Electron Devices Meeting (IEDM), 31.8. 1-31.8. 4, 2016 | 31 | 2016 |
| Curing of aged gate dielectric by the self-heating effect in MOSFETs JY Park, DI Moon, GB Lee, YK Choi IEEE Transactions on Electron Devices 67 (3), 777-788, 2020 | 26 | 2020 |
| Electro-thermal annealing method for recovery of cyclic bending stress in flexible a-IGZO TFTs MK Lee, CK Kim, JW Park, E Kim, ML Seol, JY Park, YK Choi, SHK Park, ... IEEE Transactions on Electron Devices 64 (8), 3189-3192, 2017 | 24 | 2017 |
| A comparative study on hot-carrier injection in 5-story vertically integrated inversion-mode and junctionless-mode gate-all-around MOSFETs SY Kim, BH Lee, J Hur, JY Park, SB Jeon, SW Lee, YK Choi IEEE Electron Device Letters 39 (1), 4-7, 2017 | 23 | 2017 |
| A novel technique for curing hot-carrier-induced damage by utilizing the forward current of the PN-junction in a MOSFET GB Lee, CK Kim, JY Park, T Bang, H Bae, SY Kim, SW Ryu, YK Choi IEEE Electron Device Letters 38 (8), 1012-1014, 2017 | 23 | 2017 |
| Three-dimensional fin-structured semiconducting carbon nanotube network transistor D Lee, BH Lee, J Yoon, DC Ahn, JY Park, J Hur, MS Kim, SB Jeon, ... ACS nano 10 (12), 10894-10900, 2016 | 22 | 2016 |
| Local electro-thermal annealing for repair of total ionizing dose-induced damage in gate-all-around MOSFETs JY Park, DI Moon, H Bae, YT Roh, ML Seol, BH Lee, CH Jeon, HC Lee, ... IEEE Electron Device Letters 37 (7), 843-846, 2016 | 22 | 2016 |
| Demonstration of a curable nanowire FinFET using punchthrough current to repair hot-carrier damage JY Park, J Hur, YK Choi IEEE Electron Device Letters 39 (2), 180-183, 2017 | 20 | 2017 |
| Electrothermal annealing (ETA) method to enhance the electrical performance of amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs) CK Kim, E Kim, MK Lee, JY Park, ML Seol, H Bae, T Bang, SB Jeon, S Jun, ... ACS Applied Materials & Interfaces 8 (36), 23820-23826, 2016 | 18 | 2016 |
| Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration JY Park, DI Moon, ML Seol, CH Jeon, GJ Jeon, JW Han, CK Kim, SJ Park, ... Scientific Reports 6 (1), 19314, 2016 | 18 | 2016 |
| Quantitative analysis of high-pressure Deuterium annealing effects on vertically stacked Gate-All-Around SONOS memory JM Yu, JY Park, TJ Yoo, JK Han, DH Yun, GB Lee, J Hur, BH Lee, SY Kim, ... IEEE Transactions on Electron Devices 67 (9), 3903-3907, 2020 | 17 | 2020 |
| Curing of hot-carrier induced damage by gate-induced drain leakage current in gate-all-around FETs JY Park, DH Yun, YK Choi IEEE Electron Device Letters 40 (12), 1909-1912, 2019 | 16 | 2019 |
Yang-Kyu ChoiProfessor of Electrical Engineering, KAISTee.kaist.ac.kr의 이메일 확인됨
Yang-Kyu ChoiProfessor of Electrical Engineering, KAISTee.kaist.ac.kr의 이메일 확인됨