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Ossie Douglas
Ossie Douglas
University of south Florida
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Mitigation of electromigration in metal interconnects via hexagonal boron nitride as an Ångström‐thin passivation layer
Y Jeong, O Douglas, U Misra, MRE Tanjil, K Watanabe, T Taniguchi, ...
Advanced Electronic Materials 7 (6), 2100002, 2021
52021
Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ć… ngstrƶ mā€ Thin Passivation Layer
Y Jeong, O Douglas, U Misra, MR Tanjil, K Watanabe, T Taniguchi, ...
Advanced Electronic Materials, 2021
52021
Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021)
Y Jeong, O Douglas, U Misra, MRE Tanjil, K Watanabe, T Taniguchi, ...
Advanced Electronic Materials 7 (6), 2170020, 2021
2021
Top-Down Processing Towards Ångström-Thin Two-Dimensional (2D) Elemental Metals
M Rubayat-E Tanjil, S Agbakansi, KP Suero, O Douglas, Y Jeong, Z Yin, ...
International Manufacturing Science and Engineering Conference 84256 …, 2020
2020
Top-Down Processing Towards Ångström-Thin Two-Dimensional (2D) Elemental Metals
RE Tanjil, S Agbakansi, KP Suero, O Douglas, Y Jeong, Z Yin, ...
ASME 2020 15th International Manufacturing Science and Engineering Conference, 0
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Articles 1–5