| Analysis of three-dimensional atom-probe data by the proximity histogram OC Hellman, JA Vandenbroucke, J Rüsing, D Isheim, DN Seidman Microscopy and Microanalysis 6 (5), 437-444, 2000 | 871 | 2000 |
| Combined ion and molecular beam apparatus and method for depositing materials N Herbots, OC Hellman US Patent 4,800,100, 1989 | 111 | 1989 |
| Infrared spectroscopic analysis of an ordered interface KT Queeney, N Herbots, JM Shaw, V Atluri, YJ Chabal Applied physics letters 84 (4), 493-495, 2004 | 87 | 2004 |
| Ion-solid interactions during ion beam deposition of 74Ge and 30Si on Si at very low ion energies (0–200 eV range) N Herbots, BR Appleton, TS Noggle, RA Zuhr, SJ Pennycook Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1986 | 80 | 1986 |
| Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof N Herbots, OC Hellman, OPJ Vancauwenberghe US Patent 5,241,214, 1993 | 47 | 1993 |
| Low‐temperature epitaxy of Si and Ge by direct ion beam deposition RA Zuhr, BR Appleton, N Herbots, BC Larson, TS Noggle, SJ Pennycook Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5 (4 …, 1987 | 46 | 1987 |
| New SiGe dielectrics grown at room temperature by low‐energy ion beam oxidation and nitridation O Vancauwenberghe, OC Hellman, N Herbots, WJ Tan Applied physics letters 59 (16), 2031-2033, 1991 | 45 | 1991 |
| The formation of ordered, ultrathin SiO2/Si (1 0 0) interfaces grown on (1× 1) Si (1 0 0) N Herbots, JM Shaw, QB Hurst, MP Grams, RJ Culbertson, DJ Smith, ... Materials Science and Engineering: B 87 (3), 303-316, 2001 | 41 | 2001 |
| Three-dimensional investigation of ceramic/metal heterophase interfaces by atom-probe microscopy J Rüsing, JT Sebastian, OC Hellman, DN Seidman Microscopy and Microanalysis 6 (5), 445-451, 2000 | 41 | 2000 |
| A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular deposition O Vancauwenberghe, N Herbots, OC Hellman Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 39 | 1991 |
| Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing L Rubin, D Hoffman, D Ma, N Herbots IEEE transactions on electron devices 37 (1), 183-190, 1990 | 33 | 1990 |
| Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model O Vancauwenberghe, N Herbots, OC Hellman Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992 | 30 | 1992 |
| Stability of C49 and C54 phases of TiSi2 under ion bombardment S Motakef, JME Harper, FM d’Heurle, TA Gallo, N Herbots Journal of applied physics 70 (5), 2660-2666, 1991 | 30 | 1991 |
| Haynes TE, and Apple-ton BR RA Zuhr, SJ Pennycook, TS Noggle, N Herbots Nucl. Instr. and Meth. B 37 (38), 16, 1989 | 30 | 1989 |
| Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition BR Appleton, SJ Pennycook, RA Zuhr, N Herbots, TS Noggle Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1987 | 29 | 1987 |
| Comparative study on dry oxidation of heteroepitaxial Si1−xGex and Si1−x−yGexCy on Si(100)+ J Xiang, N Herbots, H Jacobsson, P Ye, S Hearne, S Whaley Journal of applied physics 80 (3), 1857-1866, 1996 | 27 | 1996 |
| Hydrogen passivation of Si (100) wafers as templates for low temperature (T< 600 C) epitaxy V Atluri, N Herbots, D Dagel, S Bhagvat, S Whaley Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 24 | 1996 |
| Long range ordered semiconductor interface phase and oxides N Herbots, VP Atluri, JD Bradley, B Swati, QB Hurst, J Xiang US Patent 6,613,677, 2003 | 23 | 2003 |
| Ion beam oxidation of GaAs: The role of ion energy O Vancauwenberghe, N Herbots, H Manoharan, M Ahrens Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9 (3 …, 1991 | 21 | 1991 |
| Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1− x alloys: The role of ion energy, ion dose and substrate temperature OC Hellman, N Herbots, O Vancauwenberghe Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1992 | 20 | 1992 |
Stephen PennycookNational University of Singapore (retired)Verified email at utk.edu
