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Helena Castán
Helena Castán
Catedrática de Universidad, Universidad de Valladolid
Verified email at ele.uva.es
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Cited by
Year
A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ...
Semiconductor science and technology 20 (10), 1044, 2005
1002005
Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon
S Dueñas, H Castán, H García, A De Castro, L Bailón, K Kukli, A Aidla, ...
Journal of applied physics 99 (5), 2006
652006
Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates
F Campabadal, JM Rafí, M Zabala, O Beldarrain, A Faigón, H Castán, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
622011
Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
S Dueñas, H Castán, H Garcia, A Gómez, L Bailón, K Kukli, T Hatanpää, ...
Journal of The Electrochemical Society 154 (10), G207, 2007
442007
Experimental verification of intermediate band formation on titanium-implanted silicon
H Castán, E Pérez, H García, S Dueñas, L Bailón, J Olea, D Pastor, ...
Journal of Applied Physics 113 (2), 2013
412013
The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p-and n-type silicon
S Duenas, H Castán, H Garcia, J Barbolla, K Kukli, J Aarik, A Aidla
Semiconductor science and technology 19 (9), 1141, 2004
402004
A physically based model for resistive memories including a detailed temperature and variability description
G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ...
Microelectronic Engineering 178, 26-29, 2017
362017
Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx: H/InP and Al/SiNx: H/In0. 53Ga0. 47As structures by DLTS and conductance transient …
H Castán, S Dueñas, J Barbolla, E Redondo, N Blanco, I Mártil, ...
Microelectronics Reliability 40 (4-5), 845-848, 2000
342000
Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays
E Pérez, Ó González Ossorio, S Dueñas, H Castán, H García, C Wenger
Electronics 9 (5), 864, 2020
332020
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source …
H García, H Castán, S Dueñas, L Bailón, F Campabadal, O Beldarrain, ...
Journal of Vacuum Science & Technology A 31 (1), 2013
322013
Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
H Castán, S Dueñas, H García, A Gómez, L Bailón, M Toledano-Luque, ...
Journal of Applied Physics 107 (11), 2010
272010
Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices
S Dueñas, H Castán, H García, E Miranda, MB Gonzalez, F Campabadal
Microelectronic Engineering 178, 30-33, 2017
252017
2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics
JM Rafí, F Campabadal, H Ohyama, K Takakura, I Tsunoda, M Zabala, ...
Solid-state electronics 79, 65-74, 2013
252013
Controlling the intermediate conductance states in RRAM devices for synaptic applications
H García, OG Ossorio, S Dueñas, H Castán
Microelectronic Engineering 215, 110984, 2019
242019
Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
S Dueñas, H Castán, H Garcia, A Gómez, L Bailón, K Kukli, J Niinistö, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
242009
Conductance transient, capacitance–voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films
S Dueñas, H Castán, J Barbolla, K Kukli, M Ritala, M Leskelä
Solid-State Electronics 47 (10), 1623-1629, 2003
232003
Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
H Castán, S Dueñas, H García, OG Ossorio, LA Domínguez, B Sahelices, ...
Journal of Applied Physics 124 (15), 2018
222018
Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors
C Vaca, MB Gonzalez, H Castan, H Garcia, S Duenas, F Campabadal, ...
IEEE Transactions on Electron Devices 63 (5), 1877-1883, 2016
222016
Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
H García, S Dueñas, H Castán, A Gómez, L Bailón, M Toledano-Luque, ...
Journal of Applied Physics 104 (9), 2008
222008
Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
S Dueñas, H Castán, H García, A Gómez, L Bailón, M Toledano-Luque, ...
Semiconductor science and technology 22 (12), 1344, 2007
222007
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