| Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range T Güzel, AK Bilgili, M Özer Superlattices and Microstructures 124, 30-40, 2018 | 28 | 2018 |
| Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes AK Bilgili, T Güzel, M Özer Journal of Applied Physics 125 (3), 2019 | 24 | 2019 |
| Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping SOEO A. Kursat Bilgili, Ömer Akpinar, Gürkan Kurtulus, M. Kemal Ozturk Journal of Materials Science: Materials in Electronics, 2018 | 10* | 2018 |
| Avrupa Topluluğu ile bütünleşme sürecinde Türk aile yapısı A Bilgili [yy], 1993 | 10 | 1993 |
| A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells AK Bilgili, Ö Akpınar, MK Öztürk, S Özçelik, Z Suludere, E Özbay Journal of Materials Science: Materials in Electronics 30, 10391-10398, 2019 | 7 | 2019 |
| Investigation of structural, optical and morphological properties of InGaN/GaN structure AK Bilgili, Ö Akpınar, MK Öztürk, C Başköse, S Özçelik, E Özbay Applied Physics A 125, 1-11, 2019 | 7 | 2019 |
| Investigation of Electrical and Structural Properties of Ag/TiO2/n-InP/Au Schottky Diodes with Different Thickness TiO2 Interface AK Bilgili, R Çağatay, MK Öztürk, M Özer Silicon, 1-6, 2021 | 6 | 2021 |
| Swanepoel method for AlInN/AlN HEMTs O Akpinar, AK Bilgili, UC Baskose, MK Ozturk, S Ozcelik, E Ozbay Journal of Materials Science: Materials in Electronics 31, 9969-9973, 2020 | 5 | 2020 |
| On the elastic properties of INGAN/GAN LED structures O Akpınar, AK Bilgili, MK Öztürk, S Özçelik, E Özbay Applied Physics A 125, 1-13, 2019 | 5 | 2019 |
| XRD vs Raman for InGaN/GaN structures AK Bilgili, Ö Akpınar, MK Öztürk, S Özçelik, E Özbay Politeknik Dergisi 23 (2), 291-296, 2019 | 5 | 2019 |
| TiO2 Interface Instead of SiO2 in Terms of Dielectric Coefficient AK Bilgili, MK Öztürk, S Özçelik, M Özer Brazilian Journal of Physics 51, 527-531, 2021 | 1 | 2021 |
| Mosaic defects of AlN buffer layers in GaN/AlN/4H-SiC epitaxial structure T ATAŞER, D DEMİR, AK BILGILI, M ÖZTÜRK, S ÖZÇELİK Politeknik Dergisi 24 (2), 511-516, 2021 | 1 | 2021 |
| Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT) Ö Akpınar, AK Bilgili, MK Öztürk, S Özçelik Applied Physics A 126, 1-5, 2020 | 1 | 2020 |
| Investigation of structural, optical and electrical properties of Al0. 3Ga0. 7N/GaN HEMT grown by MOCVD Ö AKPINAR, AK Bilgili, MK Öztürk, S Özçelik, E Özbay Politeknik Dergisi 23 (3), 687-696, 2020 | 1 | 2020 |
| Lattice parameters a-, c-, strain-stress analysis and thermal expansion coefficient of InGaN/GaN solar cell structures grown by MOCVD AK Bilgili, Ö Akpınar, G Kurtuluş, MK Öztürk, S Özçelik, E Özbay Politeknik Dergisi 22 (1), 33-39, 2019 | 1 | 2019 |
| MOCVD Yöntemiyle Safir Alttaş Üzerine Büyütülen AlxGa1-xN/GaN HEMT Yapısının Yapısal, Optiksel ve Elektriksel Özelliklerinin İncelenmesi Ö Akpınar, A Bilgili, M Öztürk, S Özçelik, E Özbay | 1 | 2019 |
| n-InP yarıiletkeni ile hazırlanan TiO2 arayüzey tabakalı metal yarıiletken kontakların elektriksel özelliklerinin incelenmesi AK Bilgili Fen Bilimleri Enstitüsü, 2015 | 1 | 2015 |
| Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure A BİLGİLİ, Ö AKPINAR, K Naki, M ÖZTÜRK Karadeniz Fen Bilimleri Dergisi 13 (4), 1377-1385, 2023 | | 2023 |
| Analysis of Dislocation Density for GaN Based HEMTs in Screw Mod Ö BAYAL, E Balci, AK BILGILI, M ÖZTÜRK, S ÖZÇELİK, E ÖZBAY Gazi University Journal of Science Part A: Engineering and Innovation 10 (2 …, 2023 | | 2023 |
| Relationship Between Interface State and Dislocation Densities of Ag/TiO2/n-InP/Au Schottky Diodes AK Bilgili Brazilian Journal of Physics 53 (1), 22, 2023 | | 2023 |
