| Support-integrated donor wafers for repeated thin donor layer separation F Letertre, T Maurice, SOITEC US Patent 6,815,309, 2004 | 210 | 2004 |
| Method for recycling a substrate C Maleville, F Letertre, T Maurice, C Mazure, F Metral, SOITEC US Patent 7,022,586, 2006 | 96 | 2006 |
| Donor wafers for repeated thin donor layer separation F Letertre, T Maurice, SOITEC US Patent 6,908,828, 2005 | 38 | 2005 |
| Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab I Asselberghs, Q Smets, T Schram, B Groven, D Verreck, A Afzalian, ... 2020 IEEE International Electron Devices Meeting (IEDM), 40.2. 1-40.2. 4, 2020 | 36 | 2020 |
| Optical Properties of Bismuth Telluride Thin Films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100) EH Kaddouri, T Maurice, X Gratens, S Charar, S Benet, A Mefleh, ... physica status solidi (a) 176 (2), 1071-1076, 1999 | 32 | 1999 |
| Method of manufacturing a wafer T Maurice, E Guiot, SOITEC US Patent 7,217,639, 2007 | 24 | 2007 |
| The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon P Nguyen, KK Bourdelle, T Maurice, N Sousbie, A Boussagol, X Hebras, ... Journal of applied physics 101 (3), 2007 | 24 | 2007 |
| Two-stage annealing method for manufacturing semiconductor substrates C Berne, B Ghyselen, C Lagahe, T Maurice, SOITEC US Patent 6,936,523, 2005 | 22 | 2005 |
| Method of manufacturing a wafer T Maurice, I Cayrefourcq, F Fournel, SOITEC US Patent 6,838,358, 2005 | 21 | 2005 |
| Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB Q Smets, T Schram, D Verreck, D Cott, B Groven, Z Ahmed, B Kaczer, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.2. 1-34.2. 4, 2021 | 18 | 2021 |
| Raman and photoluminescence spectroscopy from n-and p-type 6H-SIC alpha-particle irradiated HW Kunert, T Maurice, J Barnas, J Malherbe, DJ Brink, L Prinsloo Vacuum 78 (2-4), 503-508, 2005 | 18 | 2005 |
| Mid Infrared Optical Investigations of Pb1—xEuxSe ∥ BaF2 Thin Films Grown by MBE T Maurice, F Mahoukou, G Breton, S Charar, P Masri, M Averous, ... physica status solidi (b) 209 (2), 523-534, 1998 | 17 | 1998 |
| MOVPE In1-xGaxAs high mobility channel for 3-D NAND memory. E Capogreco, J Lisoni, T Maurice, A Arreghini, A Subirats, B Kunert, ... In: International Electron Devices Meeting - IEDM., 2015 | 15 | 2015 |
| High yield and process uniformity for 300 mm integrated WS2 FETs T Schram, Q Smets, D Radisic, B Groven, D Cott, A Thiam, W Li, E Dupuy, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 13 | 2021 |
| Scaled transistors with 2D materials from the 300mm fab I Asselberghs, T Schram, Q Smets, B Groven, S Brems, A Phommahaxay, ... 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 67-68, 2020 | 11 | 2020 |
| Depth profiling of high-energy hydrogen-implanted 6H-SiC DJ Brink, T Maurice, S Blanque, H Kunert, J Camassel, J Pascual Applied optics 43 (6), 1275-1280, 2004 | 10 | 2004 |
| Method for fabricating a semiconductor substrate and semiconductor substrate C Figuet, C Bouvier, C Cailler, A Drouin, T Maurice, SOITEC US Patent App. 12/644,275, 2009 | 7 | 2009 |
| Raman and photoluminescence spectroscopy from N2+-ion implanted and α-irradiated and annealed GaN/sapphire HW Kunert, TP Maurice, DJ Brink, LC Prinsloo, JB Malherbe, J Camassel Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001 | 7 | 2001 |
| Epitaxy induced phase stabilization: a comparative experimental and elasticity-based theoretical study on MBE grown PbSe/CaF2/Si epilayer G Breton, T Maurice, P Masri, S Charar, M Averous International Journal of Inorganic Materials 3 (8), 1237-1239, 2001 | 6 | 2001 |
| Effects of hydrogen implantation and annealing on the vibrational properties of 6H-SiC HW Kunert, T Hauser, JB Malherbe, DJ Brink, TP Maurice, LC Prinsloo, ... Materials Science Forum 353, 2001 | 6 | 2001 |
