| Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS nano 9 (5), 4776-4785, 2015 | 314 | 2015 |
| Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ... IEEE transactions on electron devices 58 (9), 3124-3131, 2011 | 271 | 2011 |
| Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ... Journal of Applied Physics 105 (11), 2009 | 138 | 2009 |
| Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ... Applied Physics Letters 100 (23), 2012 | 114 | 2012 |
| Graphene growth on Ge (100)/Si (100) substrates by CVD method I Pasternak, M Wesolowski, I Jozwik, M Lukosius, G Lupina, P Dabrowski, ... Scientific reports 6 (1), 21773, 2016 | 113 | 2016 |
| Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ... Microelectronic Engineering 88 (7), 1133-1135, 2011 | 79 | 2011 |
| Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016 | 75 | 2016 |
| Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe Journal of Applied Physics 103 (10), 2008 | 69 | 2008 |
| On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration C Walczyk, C Wenger, D Walczyk, M Lukosius, I Costina, M Fraschke, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 63 | 2011 |
| Band alignment and electron traps in Y2O3 layers on (100) Si WC Wang, M Badylevich, VV Afanas’Ev, A Stesmans, C Adelmann, ... Applied physics letters 95 (13), 2009 | 53 | 2009 |
| Optical properties and band gap characterization of high dielectric constant oxides O Fursenko, J Bauer, G Lupina, P Dudek, M Lukosius, C Wenger, ... Thin Solid Films 520 (14), 4532-4535, 2012 | 51 | 2012 |
| Influence of the electrode material on HfO2 metal-insulator-metal capacitors C Wenger, M Lukosius, HJ Müssig, G Ruhl, S Pasko, C Lohe Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 42 | 2009 |
| Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition K Frohlich, R Luptak, E Dobrocka, K Husekova, K Cico, A Rosova, ... Materials science in semiconductor processing 9 (6), 1065-1072, 2006 | 36 | 2006 |
| High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics M Lukosius, C Walczyk, M Fraschke, D Wolansky, H Richter, C Wenger Thin Solid Films 518 (15), 4380-4384, 2010 | 34 | 2010 |
| The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors C Wenger, M Lukosius, G Weidner, HJ Müssig, S Pasko, C Lohe Thin Solid Films 517 (23), 6334-6336, 2009 | 29 | 2009 |
| Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices C Wenger, M Lukosius, I Costina, R Sorge, J Dabrowski, HJ Müssig, ... Microelectronic Engineering 85 (8), 1762-1765, 2008 | 29 | 2008 |
| Graphene Schottky junction on pillar patterned silicon substrate G Luongo, A Grillo, F Giubileo, L Iemmo, M Lukosius, ... Nanomaterials 9 (5), 659, 2019 | 28 | 2019 |
| Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors S Van Elshocht, P Lehnen, B Seitzinger, A Abrutis, C Adelmann, B Brijs, ... Journal of The Electrochemical Society 153 (9), F219, 2006 | 28 | 2006 |
| Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene R Lukose, M Lisker, F Akhtar, M Fraschke, T Grabolla, A Mai, M Lukosius Scientific reports 11 (1), 13111, 2021 | 27 | 2021 |
| Plasma-enhanced chemical vapor deposition of amorphous Si on graphene G Lupina, C Strobel, J Dabrowski, G Lippert, J Kitzmann, HM Krause, ... Applied Physics Letters 108 (19), 2016 | 25 | 2016 |
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsVerified email at ihp-microelectronics.com
