| Outstanding tensile properties of a precipitation-strengthened FeCoNiCrTi0. 2 high-entropy alloy at room and cryogenic temperatures Y Tong, D Chen, B Han, J Wang, R Feng, T Yang, C Zhao, YL Zhao, ... Acta Materialia 165, 228-240, 2019 | 408 | 2019 |
| Experimental evidence of the vacancy-mediated silicon self-diffusion in single-crystalline silicon Y Shimizu, M Uematsu, KM Itoh Physical review letters 98 (9), 095901, 2007 | 112 | 2007 |
| Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion M Naganawa, Y Shimizu, M Uematsu, KM Itoh, K Sawano, Y Shiraki, ... Applied Physics Letters 93 (19), 2008 | 71 | 2008 |
| Microstructural evolution of RPV steels under proton and ion irradiation studied by positron annihilation spectroscopy J Jiang, YC Wu, XB Liu, RS Wang, Y Nagai, K Inoue, Y Shimizu, ... Journal of Nuclear Materials 458, 326-334, 2015 | 57 | 2015 |
| Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method Y Shimizu, H Takamizawa, K Inoue, F Yano, Y Nagai, L Lamagna, ... Nanoscale 6 (2), 706-710, 2013 | 57 | 2013 |
| Composition evolution of gamma prime nanoparticles in the Ti-doped CoFeCrNi high entropy alloy B Han, J Wei, Y Tong, D Chen, Y Zhao, J Wang, F He, T Yang, C Zhao, ... Scripta Materialia 148, 42-46, 2018 | 56 | 2018 |
| Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging H Takamizawa, Y Shimizu, K Inoue, T Toyama, N Okada, M Kato, ... Applied Physics Letters 99 (13), 2011 | 55 | 2011 |
| Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design J Liang, A Kobayashi, Y Shimizu, Y Ohno, SW Kim, K Koyama, M Kasu, ... Advanced Materials 33 (43), 2104564, 2021 | 47 | 2021 |
| Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures Y Shimizu, Y Kawamura, M Uematsu, M Tomita, T Kinno, N Okada, ... Journal of Applied Physics 109 (3), 2011 | 47 | 2011 |
| Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕ Si30 isotope superlattices with sub-nanometer spatial resolution Y Shimizu, Y Kawamura, M Uematsu, KM Itoh, M Tomita, M Sasaki, ... Journal of Applied Physics 106 (7), 2009 | 45 | 2009 |
| Three-dimensional evaluation of gettering ability of Σ3 {111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy Y Ohno, K Inoue, Y Tokumoto, K Kutsukake, I Yonenaga, N Ebisawa, ... Applied Physics Letters 103 (10), 2013 | 32 | 2013 |
| Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces Y Ohno, J Liang, N Shigekawa, H Yoshida, S Takeda, R Miyagawa, ... Applied Surface Science 525, 146610, 2020 | 30 | 2020 |
| Industrial application of atom probe tomography to semiconductor devices AD Giddings, S Koelling, Y Shimizu, R Estivill, K Inoue, W Vandervorst, ... Scripta Materialia 148, 82-90, 2018 | 30 | 2018 |
| Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals Y Ohno, K Kutsukake, M Deura, I Yonenaga, Y Shimizu, N Ebisawa, ... Applied Physics Letters 109 (14), 2016 | 30 | 2016 |
| Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom … B Han, H Takamizawa, Y Shimizu, K Inoue, Y Nagai, F Yano, Y Kunimune, ... Applied Physics Letters 107 (2), 2015 | 29 | 2015 |
| Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography H Takamizawa, Y Shimizu, K Inoue, T Toyama, F Yano, A Nishida, ... Applied Physics Letters 100 (25), 2012 | 29 | 2012 |
| Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion Y Shimizu, H Takamizawa, K Inoue, T Toyama, Y Nagai, N Okada, M Kato, ... Applied Physics Letters 98 (23), 2011 | 29 | 2011 |
| Growth and characterization of short-period silicon isotope superlattices Y Shimizu, KM Itoh Thin Solid Films 508 (1-2), 160-162, 2006 | 27 | 2006 |
| Influence of laser power on atom probe tomographic analysis of boron distribution in silicon Y Tu, H Takamizawa, B Han, Y Shimizu, K Inoue, T Toyama, F Yano, ... Ultramicroscopy 173, 58-63, 2017 | 26 | 2017 |
| Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon Y Ohno, K Inoue, K Fujiwara, K Kutsukake, M Deura, I Yonenaga, ... Applied Physics Letters 110 (6), 2017 | 24 | 2017 |
Bin Han (韩斌）Shaanxi University of Science and Technology, Xi'an, China確認したメール アドレス: sust.edu.cn
